Literature DB >> 24299070

Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics.

Robert Chen1, Suyog Gupta, Yi-Chiau Huang, Yijie Huo, Charles W Rudy, Errol Sanchez, Yihwan Kim, Theodore I Kamins, Krishna C Saraswat, James S Harris.   

Abstract

We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn-based laser on silicon. The structure theoretically exhibits many electronic and optical advantages in laser design, and microdisk resonators using these structures can be precisely fabricated away from highly defective regions in the Ge buffer using a novel etch-stop process. Photoluminescence measurements on 2.7 μm diameter microdisks reveal sharp whispering-gallery-mode resonances (Q > 340) with strong luminescence.

Entities:  

Year:  2013        PMID: 24299070     DOI: 10.1021/nl402815v

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  3 in total

1.  Photoelectrical properties of graphene/doped GeSn vertical heterostructures.

Authors:  Yanhui Lv; Hui Li; Cormac Ó Coileáin; Duan Zhang; Chenglin Heng; Ching-Ray Chang; K-M Hung; Huang Hsiang Cheng; Han-Chun Wu
Journal:  RSC Adv       Date:  2020-06-02       Impact factor: 3.361

Review 2.  Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices.

Authors:  Mohamed A Nawwar; Magdy S Abo Ghazala; Lobna M Sharaf El-Deen; Abd El-Hady B Kashyout
Journal:  RSC Adv       Date:  2022-08-30       Impact factor: 4.036

3.  Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform.

Authors:  H S Mączko; R Kudrawiec; M Gladysiewicz
Journal:  Sci Rep       Date:  2016-09-30       Impact factor: 4.379

  3 in total

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