Literature DB >> 24249148

Atomistic kinetic Monte Carlo study of atomic layer deposition derived from density functional theory.

Mahdi Shirazi1, Simon D Elliott.   

Abstract

To describe the atomic layer deposition (ALD) reactions of HfO2 from Hf(N(CH3)2)4 and H2O, a three-dimensional on-lattice kinetic Monte-Carlo model is developed. In this model, all atomistic reaction pathways in density functional theory (DFT) are implemented as reaction events on the lattice. This contains all steps, from the early stage of adsorption of each ALD precursor, kinetics of the surface protons, interaction between the remaining precursors (steric effect), influence of remaining fragments on adsorption sites (blocking), densification of each ALD precursor, migration of each ALD precursors, and cooperation between the remaining precursors to adsorb H2O (cooperative effect). The essential chemistry of the ALD reactions depends on the local environment at the surface. The coordination number and a neighbor list are used to implement the dependencies. The validity and necessity of the proposed reaction pathways are statistically established at the mesoscale. The formation of one monolayer of precursor fragments is shown at the end of the metal pulse. Adsorption and dissociation of the H2O precursor onto that layer is described, leading to the delivery of oxygen and protons to the surface during the H2O pulse. Through these processes, the remaining precursor fragments desorb from the surface, leaving the surface with bulk-like and OH-terminated HfO2, ready for the next cycle. The migration of the low coordinated remaining precursor fragments is also proposed. This process introduces a slow reordering motion (crawling) at the mesoscale, leading to the smooth and conformal thin film that is characteristic of ALD.
Copyright © 2013 Wiley Periodicals, Inc.

Entities:  

Keywords:  atomic layer deposition; chemical vapor deposition; density functional theory; kinetic Monte-Carlo

Year:  2013        PMID: 24249148     DOI: 10.1002/jcc.23491

Source DB:  PubMed          Journal:  J Comput Chem        ISSN: 0192-8651            Impact factor:   3.376


  2 in total

1.  Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

Authors:  Rainer Timm; Ashley R Head; Sofie Yngman; Johan V Knutsson; Martin Hjort; Sarah R McKibbin; Andrea Troian; Olof Persson; Samuli Urpelainen; Jan Knudsen; Joachim Schnadt; Anders Mikkelsen
Journal:  Nat Commun       Date:  2018-04-12       Impact factor: 14.919

2.  Atomistic Simulations of Plasma-Enhanced Atomic Layer Deposition.

Authors:  Martin Becker; Marek Sierka
Journal:  Materials (Basel)       Date:  2019-08-15       Impact factor: 3.623

  2 in total

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