Literature DB >> 24240430

Spin Hall effect clocking of nanomagnetic logic without a magnetic field.

Debanjan Bhowmik1, Long You1, Sayeef Salahuddin2.   

Abstract

Spin-based computing schemes could enable new functionalities beyond those of charge-based approaches. Examples include nanomagnetic logic, where information can be processed using dipole coupled nanomagnets, as demonstrated by multi-bit computing gates. One fundamental benefit of using magnets is the possibility of a significant reduction in the energy per bit compared with conventional transistors. However, so far, practical implementations of nanomagnetic logic have been limited by the necessity to apply a magnetic field for clocking. Although the energy associated with magnetic switching itself could be very small, the energy necessary to generate the magnetic field renders the overall logic scheme uncompetitive when compared with complementary metal-oxide-semiconductor (CMOS) counterparts. Here, we demonstrate a nanomagnetic logic scheme at room temperature where the necessity for using a magnetic field clock can be completely removed by using spin-orbit torques. We construct a chain of three perpendicularly polarized CoFeB nanomagnets on top of a tantalum wire and show that an unpolarized current flowing through the wire can 'clock' the perpendicular magnetization to a metastable state. An input magnet can then drive the nanomagnetic chain deterministically to one of two dipole-coupled states, '2 up 1 down' or '2 down 1 up', depending on its own polarization. Thus, information can flow along the chain, dictated by the input magnet and clocked solely by a charge current in tantalum, without any magnetic field. A three to four order of magnitude reduction in energy dissipation is expected for our scheme when compared with state-of-the-art nanomagnetic logic.

Entities:  

Year:  2013        PMID: 24240430     DOI: 10.1038/nnano.2013.241

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  13 in total

1.  Room temperature magnetic quantum cellular automata

Authors: 
Journal:  Science       Date:  2000-02-25       Impact factor: 47.728

2.  A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.

Authors:  S Ikeda; K Miura; H Yamamoto; K Mizunuma; H D Gan; M Endo; S Kanai; J Hayakawa; F Matsukura; H Ohno
Journal:  Nat Mater       Date:  2010-07-11       Impact factor: 43.841

3.  Majority logic gate for magnetic quantum-dot cellular automata.

Authors:  A Imre; G Csaba; L Ji; A Orlov; G H Bernstein; W Porod
Journal:  Science       Date:  2006-01-13       Impact factor: 47.728

4.  Exploring the thermodynamic limits of computation in integrated systems: magnetic memory, nanomagnetic logic, and the Landauer limit.

Authors:  Brian Lambson; David Carlton; Jeffrey Bokor
Journal:  Phys Rev Lett       Date:  2011-07-01       Impact factor: 9.161

5.  Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection.

Authors:  Ioan Mihai Miron; Kevin Garello; Gilles Gaudin; Pierre-Jean Zermatten; Marius V Costache; Stéphane Auffret; Sébastien Bandiera; Bernard Rodmacq; Alain Schuhl; Pietro Gambardella
Journal:  Nature       Date:  2011-08-11       Impact factor: 49.962

6.  Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect.

Authors:  Luqiao Liu; O J Lee; T J Gudmundsen; D C Ralph; R A Buhrman
Journal:  Phys Rev Lett       Date:  2012-08-29       Impact factor: 9.161

7.  Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO.

Authors:  Junyeon Kim; Jaivardhan Sinha; Masamitsu Hayashi; Michihiko Yamanouchi; Shunsuke Fukami; Tetsuhiro Suzuki; Seiji Mitani; Hideo Ohno
Journal:  Nat Mater       Date:  2012-12-23       Impact factor: 43.841

8.  Giant spin Hall effect induced by skew scattering from bismuth impurities inside thin film CuBi alloys.

Authors:  Y Niimi; Y Kawanishi; D H Wei; C Deranlot; H X Yang; M Chshiev; T Valet; A Fert; Y Otani
Journal:  Phys Rev Lett       Date:  2012-10-09       Impact factor: 9.161

9.  Domain wall depinning governed by the spin Hall effect.

Authors:  P P J Haazen; E Murè; J H Franken; R Lavrijsen; H J M Swagten; B Koopmans
Journal:  Nat Mater       Date:  2013-02-03       Impact factor: 43.841

10.  Spin-torque switching with the giant spin Hall effect of tantalum.

Authors:  Luqiao Liu; Chi-Feng Pai; Y Li; H W Tseng; D C Ralph; R A Buhrman
Journal:  Science       Date:  2012-05-04       Impact factor: 47.728

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  21 in total

1.  Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy.

Authors:  Long You; OukJae Lee; Debanjan Bhowmik; Dominic Labanowski; Jeongmin Hong; Jeffrey Bokor; Sayeef Salahuddin
Journal:  Proc Natl Acad Sci U S A       Date:  2015-08-03       Impact factor: 11.205

2.  A reconfigurable waveguide for energy-efficient transmission and local manipulation of information in a nanomagnetic device.

Authors:  Arabinda Haldar; Dheeraj Kumar; Adekunle Olusola Adeyeye
Journal:  Nat Nanotechnol       Date:  2016-02-01       Impact factor: 39.213

3.  Magnetic devices: clocking with no field.

Authors:  Michael Niemier
Journal:  Nat Nanotechnol       Date:  2014-01       Impact factor: 39.213

4.  Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure.

Authors:  Kaiming Cai; Meiyin Yang; Hailang Ju; Sumei Wang; Yang Ji; Baohe Li; Kevin William Edmonds; Yu Sheng; Bao Zhang; Nan Zhang; Shuai Liu; Houzhi Zheng; Kaiyou Wang
Journal:  Nat Mater       Date:  2017-04-03       Impact factor: 43.841

5.  Deterministic Domain Wall Motion Orthogonal To Current Flow Due To Spin Orbit Torque.

Authors:  Debanjan Bhowmik; Mark E Nowakowski; Long You; OukJae Lee; David Keating; Mark Wong; Jeffrey Bokor; Sayeef Salahuddin
Journal:  Sci Rep       Date:  2015-07-03       Impact factor: 4.379

6.  Piezo Voltage Controlled Planar Hall Effect Devices.

Authors:  Bao Zhang; Kang-Kang Meng; Mei-Yin Yang; K W Edmonds; Hao Zhang; Kai-Ming Cai; Yu Sheng; Nan Zhang; Yang Ji; Jian-Hua Zhao; Hou-Zhi Zheng; Kai-You Wang
Journal:  Sci Rep       Date:  2016-06-22       Impact factor: 4.379

7.  Spin-Hall nano-oscillator with oblique magnetization and Dzyaloshinskii-Moriya interaction as generator of skyrmions and nonreciprocal spin-waves.

Authors:  A Giordano; R Verba; R Zivieri; A Laudani; V Puliafito; G Gubbiotti; R Tomasello; G Siracusano; B Azzerboni; M Carpentieri; A Slavin; G Finocchio
Journal:  Sci Rep       Date:  2016-10-27       Impact factor: 4.379

8.  Spin-torque generator engineered by natural oxidation of Cu.

Authors:  Hongyu An; Yuito Kageyama; Yusuke Kanno; Nagisa Enishi; Kazuya Ando
Journal:  Nat Commun       Date:  2016-10-11       Impact factor: 14.919

9.  Reduction of phase noise in nanowire spin orbit torque oscillators.

Authors:  Liu Yang; Roman Verba; Vasil Tiberkevich; Tobias Schneider; Andrew Smith; Zheng Duan; Brian Youngblood; Kilian Lenz; Jürgen Lindner; Andrei N Slavin; Ilya N Krivorotov
Journal:  Sci Rep       Date:  2015-11-23       Impact factor: 4.379

10.  Spin-Hall-Effect-Assisted Electroresistance in Antiferromagnets via 10(5) A/cm(2) dc Current.

Authors:  Jiahao Han; Yuyan Wang; Feng Pan; Cheng Song
Journal:  Sci Rep       Date:  2016-08-22       Impact factor: 4.379

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