Literature DB >> 24224918

Preparing the way for doping wurtzite silicon nanowires while retaining the phase.

Filippo Fabbri1, Enzo Rotunno, Laura Lazzarini, Daniela Cavalcoli, Antonio Castaldini, Naoki Fukata, Keisuke Sato, Giancarlo Salviati, Anna Cavallini.   

Abstract

It is demonstrated that boron-doped nanowires have predominantly long-term stable wurtzite phase while the majority of phosphorus-doped ones present diamond phase. A simplified model based on the different solubility of boron and phosphorus in gold is proposed to explain their diverse effectiveness in retaining the wurtzite phase. The wurtzite nanowires present a direct transition at the Γ point at approximately 1.5 eV while the diamond ones have a predominant emission around 1.1 eV. The aforementioned results are intriguing for innovative solar cell devices.

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Year:  2013        PMID: 24224918     DOI: 10.1021/nl4028445

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  1 in total

1.  Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon.

Authors:  Y Qiu; H Bender; O Richard; M-S Kim; E Van Besien; I Vos; M de Potter de ten Broeck; D Mocuta; W Vandervorst
Journal:  Sci Rep       Date:  2015-08-04       Impact factor: 4.379

  1 in total

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