Literature DB >> 24216890

Deposited low temperature silicon GHz modulator.

Yoon Ho Daniel Lee, Michael O Thompson, Michal Lipson.   

Abstract

We demonstrate gigahertz electro-optic modulator fabricated on low temperature polysilicon using excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved. These results open up an array of possibilities for silicon photonics including photonics on DRAM and on flexible substrates.

Entities:  

Year:  2013        PMID: 24216890     DOI: 10.1364/OE.21.026688

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  2 in total

1.  Extreme electronic bandgap modification in laser-crystallized silicon optical fibres.

Authors:  Noel Healy; Sakellaris Mailis; Nadezhda M Bulgakova; Pier J A Sazio; Todd D Day; Justin R Sparks; Hiu Y Cheng; John V Badding; Anna C Peacock
Journal:  Nat Mater       Date:  2014-09-28       Impact factor: 43.841

2.  Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

Authors:  Sandro Rao; Giovanni Pangallo; Francesco Giuseppe Della Corte
Journal:  Sensors (Basel)       Date:  2016-01-06       Impact factor: 3.576

  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.