Literature DB >> 24199647

Interface magnetism in epitaxial BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated on Si(100).

S S Rao1, J T Prater, Fan Wu, C T Shelton, J-P Maria, J Narayan.   

Abstract

We report on the heteroepitaxial growth of ferroelectric (FE)-antiferromagnetic (AFM) BiFeO3 (BFO) on ferromagnetic La0.7Sr0.3MnO3 (LSMO), integrated on Si(100) using pulsed laser deposition via the domain matching epitaxy paradigm. The BFO/LSMO films were epitaxially grown on Si(100) by introducing epitaxial layers of SrTiO3/MgO/TiN. X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, X-ray photo absorption spectroscopy, and atomic force microscopy were employed to fully characterize the samples. Furthermore, we have investigated the magnetic behavior of this five layer heterostructure, in which a d(5) system (Fe(3+)) manifested in FE-AFM BFO is epitaxially conjoined at the interface to a multivalent transition metal ion such as Mn(3+)/Mn(4+) in LSMO. The temperature- and magnetic field-dependent magnetization measurements reveal an unexpected enhancement in magnetic moment and improved magnetic hysteresis squareness originating from the BFO/LSMO interface. We observe a stronger temperature dependence of HEB when the polarity of field cooling is negative as compared to positive field cooling. We believe such an enhancement in magnetic moment and magnetic coupling is likely directly related to an electronic orbital reconstruction at the interface and complex interplay between orbital and spin degrees of freedom, similar to what has previously been reported in the literature. Future work will involve the linearly polarized X-ray absorption measurements to prove this hypothesis. This work represents a starting step toward the realization of magneto-electronic devices integrated with Si(100).

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Year:  2013        PMID: 24199647     DOI: 10.1021/nl4023435

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  4 in total

1.  Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.

Authors:  Souvik Kundu; Deepam Maurya; Michael Clavel; Yuan Zhou; Nripendra N Halder; Mantu K Hudait; Pallab Banerji; Shashank Priya
Journal:  Sci Rep       Date:  2015-02-16       Impact factor: 4.379

2.  Superparamagnetic state in La0.7Sr0.3MnO3 thin films obtained by rf-sputtering.

Authors:  M C Ramírez Camacho; C F Sánchez Valdés; M Curiel; J L Sánchez Llamazares; J M Siqueiros; O Raymond Herrera
Journal:  Sci Rep       Date:  2020-02-13       Impact factor: 4.379

3.  Structural transition and magnetic properties of Mn doped Bi0.88Sm0.12FeO3 ceramics.

Authors:  N T Hien; N D Vinh; N V Dang; T T Trang; H T Van; T T Thao; L T Hue; P T Tho
Journal:  RSC Adv       Date:  2020-03-26       Impact factor: 4.036

4.  Nanoscale electrical properties of epitaxial Cu3Ge film.

Authors:  Fan Wu; Wei Cai; Jia Gao; Yueh-Lin Loo; Nan Yao
Journal:  Sci Rep       Date:  2016-07-01       Impact factor: 4.379

  4 in total

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