Literature DB >> 24176930

Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

Yongsung Ji1, David F Zeigler, Dong Su Lee, Hyejung Choi, Alex K-Y Jen, Heung Cho Ko, Tae-Wook Kim.   

Abstract

Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

Year:  2013        PMID: 24176930     DOI: 10.1038/ncomms3707

Source DB:  PubMed          Journal:  Nat Commun        ISSN: 2041-1723            Impact factor:   14.919


  15 in total

1.  Layered memristive and memcapacitive switches for printable electronics.

Authors:  Alexander A Bessonov; Marina N Kirikova; Dmitrii I Petukhov; Mark Allen; Tapani Ryhänen; Marc J A Bailey
Journal:  Nat Mater       Date:  2014-11-10       Impact factor: 43.841

2.  Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide.

Authors:  Marco Bertelli; Adriano Díaz Fattorini; Sara De Simone; Sabrina Calvi; Riccardo Plebani; Valentina Mussi; Fabrizio Arciprete; Raffaella Calarco; Massimo Longo
Journal:  Nanomaterials (Basel)       Date:  2022-06-10       Impact factor: 5.719

3.  Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction.

Authors:  Harshada Patil; Honggyun Kim; Shania Rehman; Kalyani D Kadam; Jamal Aziz; Muhammad Farooq Khan; Deok-Kee Kim
Journal:  Nanomaterials (Basel)       Date:  2021-02-01       Impact factor: 5.076

4.  Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory.

Authors:  Minji Kang; Dongyoon Khim; Won-Tae Park; Jihong Kim; Juhwan Kim; Yong-Young Noh; Kang-Jun Baeg; Dong-Yu Kim
Journal:  Sci Rep       Date:  2015-07-23       Impact factor: 4.379

5.  Cellulose nanofiber paper as an ultra flexible nonvolatile memory.

Authors:  Kazuki Nagashima; Hirotaka Koga; Umberto Celano; Fuwei Zhuge; Masaki Kanai; Sakon Rahong; Gang Meng; Yong He; Jo De Boeck; Malgorzata Jurczak; Wilfried Vandervorst; Takuya Kitaoka; Masaya Nogi; Takeshi Yanagida
Journal:  Sci Rep       Date:  2014-07-02       Impact factor: 4.379

6.  Organic flash memory on various flexible substrates for foldable and disposable electronics.

Authors:  Seungwon Lee; Hyejeong Seong; Sung Gap Im; Hanul Moon; Seunghyup Yoo
Journal:  Nat Commun       Date:  2017-09-28       Impact factor: 14.919

7.  Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices.

Authors:  Younggul Song; Hyunhak Jeong; Seungjun Chung; Geun Ho Ahn; Tae-Young Kim; Jingon Jang; Daekyoung Yoo; Heejun Jeong; Ali Javey; Takhee Lee
Journal:  Sci Rep       Date:  2016-09-23       Impact factor: 4.379

8.  A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement.

Authors:  Jaemin Kim; Donghee Son; Mincheol Lee; Changyeong Song; Jun-Kyul Song; Ja Hoon Koo; Dong Jun Lee; Hyung Joon Shim; Ji Hoon Kim; Minbaek Lee; Taeghwan Hyeon; Dae-Hyeong Kim
Journal:  Sci Adv       Date:  2016-01-01       Impact factor: 14.136

9.  Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film.

Authors:  Sandeep Munjal; Neeraj Khare
Journal:  Sci Rep       Date:  2017-09-29       Impact factor: 4.379

10.  Highly-stable write-once-read-many-times switching behaviors of 1D-1R memristive devices based on graphene quantum dot nanocomposites.

Authors:  Sihyun Sung; Chaoxing Wu; Hyun Soo Jung; Tae Whan Kim
Journal:  Sci Rep       Date:  2018-08-13       Impact factor: 4.379

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