David A Egger1, Egbert Zojer. 1. Institute of Solid State Physics, Graz University of Technology , Petersgasse 16, A-8010 Graz, Austria.
Abstract
We explore the limits of modifying metal work functions with large molecular dipoles by systematically increasing the dipole moment of archetype donor-acceptor molecules in self-assembled monolayers on gold. Contrary to intuition, we find that enhancing the dipoles leads to a reduction of the adsorption-induced change of the work function. Using atomistic simulations, we show that large dipoles imply electronic localization and level shifts that drive the interface into a thermodynamically unstable situation and trigger compensating charge reorganizations working against the molecular dipoles. Under certain circumstances, these are even found to overcompensate the effect that increasing the dipoles has for the work function.
We explore the limits of modifying metal work functions with large molecular dipoles by systematically increasing the dipole moment of archetype donor-acceptor molecules in self-assembled monolayers on gold. Contrary to intuition, we find that enhancing the dipoles leads to a reduction of the adsorption-induced change of the work function. Using atomistic simulations, we show that large dipoles imply electronic localization and level shifts that drive the interface into a thermodynamically unstable situation and trigger compensating charge reorganizations working against the molecular dipoles. Under certain circumstances, these are even found to overcompensate the effect that increasing the dipoles has for the work function.
The work function Φ defined
as the minimum energy to extract an electron from a solid material
is a fundamental physical quantity. When measured by photoemission
spectroscopy, it is determined as the difference between the vacuum
energy just outside of the material, Evac, and the Fermi Energy, EF.[1,2] Φ can be altered easily as it is strongly influenced by the
detailed atomistic structure of the surface.[1] This triggered the seminal idea of tuning Φ via the adsorption
of ordered polar species, which can be exploited to improve the efficiency
of charge carrier injection in electronic devices.[3] Organic molecules have been identified as ideal agents
for this task as their permanent dipole moments can be efficiently
adjusted through chemical substitution. Moreover, they offer the possibility
to cover a substrate as a self-assembled monolayer (SAM), this way
operating as ideal surface dipole layers.[4−6] While the magnitude
of the monolayer dipole moment determines the amount of the work function
change ΔΦ, the dipole polarity determines its sign. This
correlation between the dipole moment of the SAM molecules and ΔΦ
is a well-established concept and has been confirmed experimentally
for a number of metal–SAM systems.[1,3,7,8] For “conventional”
SAMs, it is recovered also with the methodology used here, as shown
for a number of systems contained in the Supporting
Information (SI).Still, a direct correlation between the molecular dipole moment
and the SAM-induced ΔΦ can be disturbed by several effects.[9] First, the chemical bonding of the SAM to the
substrate is associated with substantial charge rearrangements affecting
Φ[10] Their magnitude critically depends
on the SAM docking chemistry.[11,12] Also, the possibility
of structural reorganizations such as dimerization of the molecules
(see ref (13) and references
therein) can reduce the monolayer dipole moment and, thus, impede
the impact of the molecular dipole onto ΔΦ. Moreover,
even in a well-ordered layer, inherent depolarization of the dipoles
due to the neighboring polar molecules occurs.[14−20] Such a depolarization causes the dipole moment per molecule to be
significantly smaller in the monolayer than that in the gas-phase,
effectively limiting the achievable work function change. A saturation
of ΔΦ with the molecular dipole has actually been predicted
by Vager et al. based on the dielectric breakdown of the layers.[21] For large dipoles and SAMs of low polarizability,
also significant charge transfer between the substrate and the SAM
has been suggested based on electrostatic total energy arguments.[14]In this Letter, we show for deliberately chosen donor–acceptor
based “push–pull” molecules bonded to Au(111)
using state-of-the-art atomistic simulations that under certain circumstances,
increasing the molecular dipole moment can, in fact, reduce the change
of the work function. This unexpected anticorrelation, which effectively
goes beyond the saturation of Φ anticipated from the aforementioned
depolarization effect or dielectric breakdown, is rationalized by
a dipole-induced localization and renormalization of the electronic
levels in the SAM (i.e., traced back to a quantum mechanical origin).
These state localization and level shifts, in fact, originate already
at the molecular level but are found to prevail in the densely packed
monolayer and, thus, withstand competing electrostatic effects such
as depolarization. At the metal–organic interface, they lead
to charge rearrangements that preserve thermodynamic equilibrium and
overcompensate for the increase in dipole moment. The underlying effects
are of fundamental nature and can be expected to apply quite generally
for the adsorption of molecules with large, extended dipoles.We here rely on donor–acceptor (push–pull-type) merocyanine
derivatives (MCs), as shown in Figure 1a, because
of their very large molecular dipole moments (ca. −13 D) with
the charge separation extending over the molecular backbones. Such
systems have been successfully synthesized and employed in the field
of nonlinear optics.[22−25] MCs offer exceptionally convenient ways to systematically explore
the impact of increasing dipoles as the latter can be tuned by twisting
the molecule along the central inter-ring carbon–carbon bond
(Figure 1a, top), which drives the molecule
into a zwitterionic ground state.[24] Note
that such twisting has been achieved experimentally[25] by attaching substituents to the center of the molecule
(for a discussion of the possible existence of a biradical state as
suggested in ref (26), see the SI). As an alternative strategy
for increasing the dipole of MCs, one can elongate the molecules by
inserting −C2H2– spacers between
the donor and acceptor parts (see Figure 1a,
bottom).
Figure 1
(a) Chemical structures of the investigated MCs. To increase dipole
moments, the molecules can be twisted (top) and the separation between
the donor and acceptor parts can be increased (bottom). (b) Side view
of the Au(111)/MC-SAM interface. (c) Plane-averaged electron electrostatic
energy of the planar, free-standing MC-SAM. The vacuum levels (Evac), ionization potentials (IPs), and electron
affinities (EAs) are indicated for the side oriented toward the metal
surface (s) and toward the vacuum (v). (Structural representations
produced using XCrySDen.[567])
(a) Chemical structures of the investigated MCs. To increase dipole
moments, the molecules can be twisted (top) and the separation between
the donor and acceptor parts can be increased (bottom). (b) Side view
of the Au(111)/MC-SAM interface. (c) Plane-averaged electron electrostatic
energy of the planar, free-standing MC-SAM. The vacuum levels (Evac), ionization potentials (IPs), and electron
affinities (EAs) are indicated for the side oriented toward the metal
surface (s) and toward the vacuum (v). (Structural representations
produced using XCrySDen.[567])Experimentally, the assembly of zwitterionic molecules with large
dipole moments on inorganic substrates has been realized for several
systems.[27,28] For the case of donor–acceptor molecules,
it was shown that using chemical linkers to bind the molecules to
the substrate results in stable SAMs on Au.[29] Therefore, we functionalized MCs with thiol (−SH) docking
groups (cf. Figure 1a and b), allowing for
a strong gold–molecule bond, and modeled these MC-SAMs on Au(111)
in a (√3 × 3) surface unit cell (Figure 1b). Our simulations and optimizations (for details, see the SI) rely on state-of-the-art density functional
theory (DFT) calculations conducted with the electronic structure
program VASP[30] and the optimizer GADGET.[31] To obtain the final electronic structure, we
performed computationally demanding HSE06 hybrid DFT band structure
calculations.[32] This is necessary as it
has been shown that hybrid DFT functionals correct some of the errors
inherent to standard (semi)local xc functionals,[33] especially for differently localized electronic states.[34]First, we investigate the unbound molecular layer of MC molecules.
In Figure 1c, we show the plane-averaged electron
electrostatic energy of the hypothetical, “free-standing”,
H-saturatedMC-SAM (i.e., the system in the absence of the gold substrate;
the corresponding plot for the bonded SAM is contained in the SI). The strongly polar MC molecules modify the
electrostatic potential energy in a profound way.[10] Arranged in an ordered fashion, they “split space”
into two regions with different vacuum levels, Evacs on the side
eventually oriented toward the metallic surface and Evacv toward
the vacuum (see Figure 1c). Due to the strong
dipoles, the associated potential energy jump (ΔEvac) is particularly large (ca. 5 eV). Consequently, the
monolayer ionization potential IP obtained from the maximum of the
band derived from the highest-occupied molecular orbital (HOMO) is
largely different for removing an electron to one or the other of
the two sides of the monolayer (IPs versus IPv; see Figure 1c).[10] Importantly, we find that IPs is small (ca. −3
eV) compared to the work function of pristine Au(111) calculated to
be −5.1 eV. This comparably small IPs (and large
IPv; cf. Figure 1c) is a direct
consequence of the huge ΔEvac as
the latter results in a reduction of IPs and increase of
IPv compared to the molecular situation. Thus, the peculiar
alignment of the molecular relative to the metallic levels discussed
in detail below, naturally arises from the large molecular dipole
moments.Increasing the dipole moment of the MC molecules in the free-standing
SAM by increasing the inter-ring twist angle (see Figure 1a) further amplifies ΔEvac by up to ∼0.7 eV (stars in Figure 2a). Traditionally, one would expect that this tuning of the
conformation should boost the SAM-induced change in ΔΦ
in a similar manner.
Figure 2
Calculated step in the electrostatic energy for the free-standing
SAM, ΔEvac, and induced work function
modification, ΔΦ, for the same SAM adsorbed on gold. Data
are plotted both as a function of the inter-ring twist angle (a) and
the number of inserted −C2H2–
spacers (b). Note that for the chosen packing density, 1 eV in energy
translates to a dipole moment of −1.2 D per molecule.
Calculated step in the electrostatic energy for the free-standing
SAM, ΔEvac, and induced work function
modification, ΔΦ, for the same SAM adsorbed on gold. Data
are plotted both as a function of the inter-ring twist angle (a) and
the number of inserted −C2H2–
spacers (b). Note that for the chosen packing density, 1 eV in energy
translates to a dipole moment of −1.2 D per molecule.Interestingly, when examining the MC-SAMs bonded to gold via the
thiolate group (i.e., when considering ΔΦ), we find the
exact opposite trend (circles in Figure 2a).
The twisted MC molecules result in significantly smaller ΔΦ
values (by ca. 0.3 eV) than their planar (i.e., zero degree twisted)
analogues. Note that the slight increase seen for ΔΦ when
increasing the twist from 80 to 90° is a consequence of a vanishing
HOMO–LUMO gap in the MC-SAM. When elongating the MC molecule
through inserting −C2H2– spacers,
thus enlarging the molecular dipoles by increasing the charge-transfer
distance between the donor and acceptor groups (cf., Figure 1a), the same trends are found (Figure 2b); ΔEvac increases by 0.2
eV (stars in Figure 2b), while ΔΦ
decreases by −0.1 eV (circles in Figure 2b). As discussed above, this anticorrelation between trends in ΔEvac and ΔΦ (i.e., between the dipolar
layer in vacuum and adsorbed on a surface) is entirely unexpected
from a purely electrostatic perspective and somehow reminiscent of
the anomalous work function shifts reported for atomic species adsorbed
on metal surfaces, where negatively charged atoms were shown to result
in an unexpected adsorption-induced work function decrease.[35,36]The origin of this unusual behavior must be rooted in the metal–organic
interaction and the potential energy shift arising from the charge
rearrangements upon SAM–gold bond formation. This “bond
dipole”, ΔEBD, electrostatically
shifts all molecular states with respect to EF; with ΔEvac, it adds up
to ΔΦ (ΔΦ = ΔEvac + ΔEBD).[10] For thiol-bonded SAMs on Au(111), the expected ΔEBD is, however, only on the order of ∼−1
eV,[10] which is much smaller than the relatively
large ΔEBD = −2.4 eV calculated
from ΔΦ and ΔEvac for
the planar MC-SAMs on Au(111). Remarkably, we obtain a pronounced
amplification of ΔEBD by ∼−1
eV from the planar to the perpendicular configuration, with ΔEBD eventually reaching a value of −3.4
eV (see Figure S4 in the SI). As a consequence,
ΔEBD not only counteracts the twisting-induced
effect of 0.7 eV in ΔEvac, it even
overshoots it in magnitude by 0.3 eV. To appreciate the general relevance
of this behavior, it is necessary to understand its microscopic origin.
Interfacial charge rearrangements comparable in magnitude to the present
ones have previously been shown to occur as a consequence of Fermi
level pinning.[37] This mechanism manifests
itself in a strong response in the interfacial charge density, which
ensures that equilibrium is maintained by preventing occupied states
in the organic from lying above (or unoccupied below) the Fermi level.[38,39] Typically, the energy of the frontier electronic states in the organic
is then found to be close to EF of the
substrate.[40−43] Recalling that IPs of the planar free-standing MC-SAM
is only ∼−3 eV (see Figure 1c)
and Φ of the bare Au(111) substrate is −5.1 eV in the
calculations, Fermi level pinning is to be expected here (and also
for less noble substrates such as the Ag(111) surface). Indeed, our
calculations confirm that the highest-occupied band aligns with EF for all studied systems.The evolution of Φ in the case of Fermi level pinning has
been shown to depend on the spatial localization of the molecular
pinning level.[44] We illustrate this in
a Gedankenexperiment, where we start from a pinned
situation representative of the MC-SAM on gold (Figure 3, blue curves) and then gradually increase ΔEvac across the monolayer (green and red curves
in Figure 3, central and right panels). When
the pinning level, which for the present situation is the HOMO, is
spatially close to the interface region (Figure 3, green curve in central panel), a change in ΔEvac will hardly affect their relative energetic distance
to EF. Then, no further charge rearrangements
are needed to maintain equilibrium at the interface (i.e., to align
the pinning level with EF), ΔEBD will remain essentially constant, and an
increase of ΔEvac (and the molecular
dipoles) directly maps onto a further increase of ΔΦ.
When, however, the HOMO is localized close to the vacuum side (red
curve in right panel), increasing ΔEvac would shift it up in energy with respect to EF and, consequently, trigger further charge rearrangements,
keeping the HOMO and EF aligned, which
results in a larger ΔEBD. In that
case, an increase in ΔEvac will
be diminished by the amplified ΔEBD, and ΔΦ remains constant. This saturation of ΔΦ
due to orbital localization holds for layers with opposite dipole
polarity as well. Large molecular dipoles pointing away from the metal
surface decrease Φ until pinning of the lowest-unoccupied molecular
orbital (LUMO) at EF occurs. Then, the
localization of the LUMO determines the further evolution of Φ.
Figure 3
Schematic showing the impact of orbital localization on ΔΦ
when increasing ΔEvac in the pinning
regime. Starting from Fermi-level alignment (left panel and all blue
plots), a continuous increase in ΔEvac maps onto an increase in ΔΦ when the pinning level is
localized close to the metal (green line, center panel) and is diminished
by a decrease of ΔEBD when the state
is localized toward the vacuum (red line, right panel).
Schematic showing the impact of orbital localization on ΔΦ
when increasing ΔEvac in the pinning
regime. Starting from Fermi-level alignment (left panel and all blue
plots), a continuous increase in ΔEvac maps onto an increase in ΔΦ when the pinning level is
localized close to the metal (green line, center panel) and is diminished
by a decrease of ΔEBD when the state
is localized toward the vacuum (red line, right panel).The localization of the pinned states can be determined by the
plane-averaged charge density corresponding to the HOMO-derived band
best shown for the free-standing (i.e., nonbonded) MC monolayer (see
Figure 4a). It is found to be localized toward
the vacuum side of the SAM already at 0° twist (see the SI for the full real space representation of
the associated electronic bands). This notion is supported by the
center of the HOMO-related charge being shifted relative to that of
the (positive) nuclear charge by 2 Å toward the vacuum (vertical
lines in Figure 4a). Upon twisting the SAM
(and thereby increasing the dipole), the localization of the HOMO
even slightly increases. This (partial) localization of the HOMO on
the donor side is exactly what one expects for a push–pull
molecule, while the LUMO tends to be localized more on the acceptor
side (molecular orbital localization). In the densely packed MC-SAM,
the “molecular” situation is modified by two collective
effects. As mentioned above, a parallel alignment of polar molecules
results in a reduction of the individual molecular dipole due to depolarization
effects,[9,14−21] which generally decreases the degree of the aforementioned charge
localization (collective orbital delocalization).[34] Concomitantly, the extended dipole moments in the SAM cause
a spatially continuous modification of the electrostatic potential
along the monolayer (see Figure 1c), which
results in a collective orbital localization.[34,45] We, however, do not observe profound changes in the localization
of the frontier levels due to these collective effects.
Figure 4
(a) Plane-averaged charge density corresponding to the HOMO-derived
band for 0 and 70° twists; (b) corresponding densities of states
for the free-standing MC-SAM. In (a), the vertical lines denote the
center of the (positive) molecular nuclear charge (dashed) and the
center of the charge corresponding to the HOMO (solid) for the planar
MC.
(a) Plane-averaged charge density corresponding to the HOMO-derived
band for 0 and 70° twists; (b) corresponding densities of states
for the free-standing MC-SAM. In (a), the vertical lines denote the
center of the (positive) molecular nuclear charge (dashed) and the
center of the charge corresponding to the HOMO (solid) for the planar
MC.The localization of the relevant states has two important consequences
for Φ: (i) Monolayers with particularly large, delocalized dipoles
will typically comprise pinning levels more localized toward the vacuum,
which in itself poses a natural obstacle for increasing Φ, and
for strong localization, even a natural limit for ΔΦ achievable
with ordered dipolar layers (see Figure 3,
right panel). This rationale prevails when reversing the dipole direction
as the change in sign of ΔEvac entails
pinning to occur at the LUMO, which then, due to the change in dipole
polarity, is again localized close to the vacuum side. (ii) The localization
of the frontier states together with the potential gradient within
the SAM (see Figure 1c) results in a particularly
small IPs for dipoles pointing toward the surface and particularly
large EAs for dipoles pointing away from it, creating a
situation prone to Fermi level pinning independent of the specific
nature of the molecules in the SAM. Of course, whether Fermi level
pinning is ultimately observed depends on the electronic structure
of the substrate (Φ in particular), the electronic levels within
the adsorbate, and the amplitude of the molecular dipole moment.The remaining question is why in the case of the MC-based SAMs
on gold one goes beyond the above described saturation of Φ,
that is, why does increasing the dipoles result in a decrease of ΔΦ.
Indeed, a saturation of ΔΦ can also be inferred from electrostatic
models, as explicitly shown in ref (21). To explain the anticorrelation observed here,
one however needs to dig deeper and analyze how strategies for increasing
dipoles typically affect the molecular electronic structure. Comparing
the density of states (DOS) of the MC-SAM at planar and twisted geometries
(Figure 4b; see the SI for the complete data set), we find that increasing the dipole by
twisting the molecular segments leads to a strong energetic upshift
(destabilization) of the HOMO and a downshift (stabilization) of the
LUMO; the band gap is reduced significantly (see Figure 4b). For the MC-SAM on the Au(111) substrate (see Figure S7
in the SI), we find a comparable band gap
reduction. As the HOMO is aligned with EF due to Fermi level pinning, this results in a reduced energetic
difference between EF and the vacuum level
(i.e., the work function is decreased). This eventually causes the
observed anticorrelation between the molecular dipole and ΔΦ.
Similar effects are observed when increasing the charge-transfer distance
by inserting −C2H2– spacers. As
the conjugation length of the molecules in the SAM is extended, its
band gap is reduced, and thus, Fermi level pinning involving the HOMO-related
band becomes more effective. The net effect can also be explained
through the impact of the reduced gap on interfacial charge rearrangements.
To maintain equilibrium and retain the alignment of the HOMO with EF, the destabilization of the HOMO that occurs
already in the free-standing SAM has to be compensated for by additional
charge rearrangements when the layer is brought into contact with
the metal, which further boosts ΔEBD. Consequently, the total ΔEBD not
only compensates for increases in ΔEvac, it even overshoots it in magnitude and causes the observed anticorrelation
(see Figures 2a and b).In summary, we have shown that, in sharp contrast to intuition,
increasing the dipole of SAM-forming molecules attached to a metal
substrate does not necessarily result in an increase of ΔΦ.
As soon as the dipole moments surpass a certain limit, Fermi level
pinning becomes inevitable, which can pose a natural limit to achievable
work function modifications, in line with earlier electrostatic considerations.[21] To what extent the charge rearrangements can
fully compensate for the dipole increase, however, depends on the
localization of the pinned states, that is, their quantum nature.
The latter becomes even more relevant for explaining our most unexpected
finding, namely, an anticorrelation between the evolutions of the
dipole moment and induced work function changes observed here for
MC-type SAMs on Au(111). It is found to arise from an energetic shift
of the HOMO occurring as a consequence of increasing the dipoles.
Authors: Mark T Greiner; Michael G Helander; Wing-Man Tang; Zhi-Bin Wang; Jacky Qiu; Zheng-Hong Lu Journal: Nat Mater Date: 2011-11-06 Impact factor: 43.841
Authors: Christopher D Zangmeister; Jeremy M Beebe; Jawad Naciri; James G Kushmerick; Roger D van Zee Journal: Small Date: 2008-08 Impact factor: 13.281
Authors: G Heimel; S Duhm; I Salzmann; A Gerlach; A Strozecka; J Niederhausen; C Bürker; T Hosokai; I Fernandez-Torrente; G Schulze; S Winkler; A Wilke; R Schlesinger; J Frisch; B Bröker; A Vollmer; B Detlefs; J Pflaum; S Kera; K J Franke; N Ueno; J I Pascual; F Schreiber; N Koch Journal: Nat Chem Date: 2013-02-17 Impact factor: 24.427
Authors: Michał Malicki; Zelei Guan; Sieu D Ha; Georg Heimel; Stephen Barlow; Mariacristina Rumi; Antoine Kahn; Seth R Marder Journal: Langmuir Date: 2009-07-21 Impact factor: 3.882