| Literature DB >> 24150295 |
Shunfei Fan, Zhixin Qin, Chenguang He, Mengjun Hou, Xinqiang Wang, Bo Shen, Wei Li, Weiying Wang, Defeng Mao, Peng Jin, Jianchang Yan, Peng Dong.
Abstract
The exciton localization in wurtzite AlxGa₁-xN alloys with x varying from 0.41 to 0.63 has been studied by deep-ultraviolet photoluminescence (PL) spectroscopy and picosecond time-resolved PL spectroscopy. Obvious S-shape temperature dependence was observed indicating that the strong exciton localization can be formed in high Al composition AlxGa₁-xN alloys. It was also found that the Al composition dependence of exciton localization energy of AlGaN alloys is inconsistent with that of the excitonic linewidth. We contribute the inconsistency to the strong zero-dimensional exciton localization.Entities:
Year: 2013 PMID： 24150295 DOI： 10.1364/OE.21.024497
Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894