Oxygen diffusion and nonstoichiometry in BiFeO3.

Leakage current is a serious problem for the use of ferroelectricity in room-temperature multiferroics BiFeO3, and oxygen nonstoichiometry is considered as one of its principal origins. In order to establish a method to control oxygen content in the compound, we investigated the annealing process of stoichiometric BiFeO3 grains in air and revealed that oxygen diffusion occurs in two steps: (1) the weight of the sample decreases in a short time, which originates from the generation of oxygen deficiency near the surface of the grains; and then (2) it increases gradually and slowly, which originates from oxygen diffusion toward equilibrium in the inner part of the grains, introducing excess oxygen there. Step 1 causes the leakage current, and step 2 tends to cause inhomogeneity of oxygen content as well as the leakage current. Steps 1 and 2 are related to oxygen deficiency and excess oxygen often observed in thin films and bulk crystals, respectively. For the synthesis of homogeneous and highly insulating bulk sample, it is important to avoid these annealing processes, and it is a good way to grow a crystal with stoichiometric oxygen content by the control of atmospheric oxygen partial pressure and taking out its inner part.