Inkjet-printed In(2)O(3) thin-film transistor below 200 °C.

High-performance In2O3 thin-film transistors could be prepared by an inkjet-printing method below 200 °C with a single precursor and solvent formulation. The self-combustion reaction took place with the electrical properties of In2O3 at a low temperature of 147 °C, which was confirmed by X-ray photoelectron spectroacopy and thermal analysis. The electrical properties after postannealing at 200 °C were as follows: a mobility of 3.98 cm(2)/V·s, a threshold voltage of 1.83 V, a subthreshold slope of 0.4 V/dec, and an on-to-off current ratio of 10(8), which are the best properties by an inkjet process thus far. The positive bias stability was much improved by postannealing, and good negative bias stability was obtained.