Literature DB >> 24136810

Ferroelectric domain wall injection.

Jonathan R Whyte1, Raymond G P McQuaid, Pankaj Sharma, Carlota Canalias, James F Scott, Alexei Gruverman, J Marty Gregg.   

Abstract

Ferroelectric domain wall injection has been demonstrated by engineering of the local electric field, using focused ion beam milled defects in thin single crystal lamellae of KTiOPO4 (KTP). The electric field distribution (top) displays localized field hot-spots, which correlate with nucleation events (bottom). Designed local field variations can also dictate subsequent domain wall mobility, demonstrating a new paradigm in ferroelectric domain wall control.
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  domain wall engineering; electric field engineering; ferroelectric; injection; positioning

Year:  2013        PMID: 24136810     DOI: 10.1002/adma.201303567

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  7 in total

1.  Applied physics: trawling for complements.

Authors:  J Marty Gregg; Amit Kumar
Journal:  Nature       Date:  2014-06-26       Impact factor: 49.962

2.  Imaging and tuning polarity at SrTiO3 domain walls.

Authors:  Yiftach Frenkel; Noam Haham; Yishai Shperber; Christopher Bell; Yanwu Xie; Zhuoyu Chen; Yasuyuki Hikita; Harold Y Hwang; Ekhard K H Salje; Beena Kalisky
Journal:  Nat Mater       Date:  2017-09-18       Impact factor: 43.841

3.  A diode for ferroelectric domain-wall motion.

Authors:  J R Whyte; J M Gregg
Journal:  Nat Commun       Date:  2015-06-10       Impact factor: 14.919

4.  Nonvolatile ferroelectric domain wall memory.

Authors:  Pankaj Sharma; Qi Zhang; Daniel Sando; Chi Hou Lei; Yunya Liu; Jiangyu Li; Valanoor Nagarajan; Jan Seidel
Journal:  Sci Adv       Date:  2017-06-23       Impact factor: 14.136

Review 5.  Piezoresponse force microscopy and nanoferroic phenomena.

Authors:  Alexei Gruverman; Marin Alexe; Dennis Meier
Journal:  Nat Commun       Date:  2019-04-10       Impact factor: 14.919

Review 6.  Functional Ferroic Domain Walls for Nanoelectronics.

Authors:  Pankaj Sharma; Peggy Schoenherr; Jan Seidel
Journal:  Materials (Basel)       Date:  2019-09-10       Impact factor: 3.623

7.  Hall effect in charged conducting ferroelectric domain walls.

Authors:  M P Campbell; J P V McConville; R G P McQuaid; D Prabhakaran; A Kumar; J M Gregg
Journal:  Nat Commun       Date:  2016-12-12       Impact factor: 14.919

  7 in total

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