Voltage-controlled nonvolatile molecular memory of an azobenzene monolayer through solution-processed reduced graphene oxide contacts.

The solution-processed fabrication of an azobenzene (ABC10) monolayer-based nonvolatile memory device on a reduced graphene oxide (rGO) electrode is successfully accomplished. Trans--cis isomerizations of ABC10 between two rGO electrodes in a crossbar device are controlled by applied voltage. An rGO soft-contact top electrode plays an important role in the conformational-change-dependent conductance switching process of an ABC10 monolayer.