Literature DB >> 24126296

In situ atomic-scale visualization of oxide islanding during oxidation of Cu surfaces.

Guangwen Zhou1, Langli Luo, Liang Li, Jim Ciston, Eric A Stach, Wissam A Saidi, Judith C Yang.   

Abstract

Oxidation of Cu occurs via Cu2O islanding on an oxide wetting layer at a critical thickness of two atomic layers. The transition from 2D wetting-layer growth to 3D oxide islanding is driven energetically arising from the Cu-Cu2O interfacial interaction.

Entities:  

Year:  2013        PMID： 24126296     DOI： 10.1039/c3cc46684a

Source DB:  PubMed          Journal:  Chem Commun (Camb)        ISSN： 1359-7345            Impact factor:   6.222


  3 in total

Review 1.  Metal/semiconductor interfaces in nanoscale objects: synthesis, emerging properties and applications of hybrid nanostructures.

Authors:  Michael Volokh; Taleb Mokari
Journal:  Nanoscale Adv       Date:  2020-03-02

2.  Unusual layer-by-layer growth of epitaxial oxide islands during Cu oxidation.

Authors:  Meng Li; Matthew T Curnan; Michael A Gresh-Sill; Stephen D House; Wissam A Saidi; Judith C Yang
Journal:  Nat Commun       Date:  2021-05-13       Impact factor: 14.919

3.  Defect-driven selective metal oxidation at atomic scale.

Authors:  Qi Zhu; Zhiliang Pan; Zhiyu Zhao; Guang Cao; Langli Luo; Chaolun Ni; Hua Wei; Ze Zhang; Frederic Sansoz; Jiangwei Wang
Journal:  Nat Commun       Date:  2021-01-25       Impact factor: 14.919
  3 in total

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