Infrared spectrum of the Si3H8+ cation: evidence for a bridged isomer with an asymmetric three-center two-electron Si-H-Si bond.

The IR spectrum of Si3H8(+) ions produced in a supersonic plasma molecular beam expansion of SiH4, He, and Ar is inferred from photodissociation of cold Si3H8(+)-Ar complexes. Vibrational analysis of the spectrum is consistent with a Si3H8(+) structure (2(+)) obtained by a barrierless addition reaction of SiH4 to the disilene ion (H2Si=SiH2(+)) in the silane plasma. In this structure, one of the electronegative H atoms of SiH4 donates electron density into the partially filled electrophilic π orbital of the disilene cation. The resulting asymmetric Si-H-Si bridge of the 2(+) isomer with a bond energy of approximately 60 kJ mol(-1) is characteristic for a weak three-center two-electron bond, which is identified by its strongly IR active asymmetric Si-H-Si stretching fundamental at about 1765 cm(-1). The observed 2(+) isomer is calculated to be only a few kJ mol(-1) less stable than the global minimum structure of Si3H8(+) (1(+)), which is derived from vertical ionization of trisilane. Although more stable, 1(+) is not detected in the measured IR spectrum of Si3H8(+)-Ar, and its lower abundance in the supersonic plasma is rationalized by the production mechanism of Si3H8(+) in the silane plasma, in which a high barrier between 2(+) and 1(+) prevents the efficient formation of 1(+). The potential energy surface of Si3H8(+) is characterized in some detail by quantum chemical calculations. The structural, vibrational, electronic and energetic properties as well as the chemical bonding mechanism are investigated for a variety of low-energy Si3H8(+) isomers and their fragments. The weak intermolecular bonds of the Ar ligands in the Si3H8(+)-Ar isomers arise from dispersion and induction forces and induce only a minor perturbation of the bare Si3H8(+) ions. Comparison with the potential energy surface of C3H8(+) reveals the differences between the silicon and carbon species.