| Literature DB >> 24104136 |
D Marris-Morini, C Baudot, J-M Fédéli, G Rasigade, N Vulliet, A Souhaité, M Ziebell, P Rivallin, S Olivier, P Crozat, X Le Roux, D Bouville, S Menezo, F Bœuf, L Vivien.
Abstract
We demonstrate high-speed silicon modulators based on carrier depletion in interleaved pn junctions fabricated on 300 mm-SOI wafers using CMOS foundry facilities. 950 µm-long Mach Zehnder (MZ) and ring resonator (RR) modulator with a 100 µm radius, were designed, fabricated and characterized. 40 Gbit/s data transmission has been demonstrated for both devices. The MZ modulator exhibited a high extinction ratio of 7.9 dB with only 4 dB on-chip losses at the operating point.Year: 2013 PMID： 24104136 DOI： 10.1364/OE.21.022471
Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894