Literature DB >> 24093475

Magnetic polarons and large negative magnetoresistance in GaAs nanowires implanted with Mn ions.

Sandeep Kumar1, Waldomiro Paschoal, Andreas Johannes, Daniel Jacobsson, Christian Borschel, Anna Pertsova, Chih-Han Wang, Maw-Kuen Wu, Carlo M Canali, Carsten Ronning, Lars Samuelson, Håkan Pettersson.   

Abstract

We report on low-temperature magnetotransport and SQUID measurements on heavily doped Mn-implanted GaAs nanowires. SQUID data recorded at low magnetic fields exhibit clear signs of the onset of a spin-glass phase with a transition temperature of about 16 K. Magnetotransport experiments reveal a corresponding peak in resistance at 16 K and a large negative magnetoresistance, reaching 40% at 1.6 K and 8 T. The negative magnetoresistance decreases at elevated temperatures and vanishes at about 100 K. We interpret our transport data in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins, forming a paramagnetic/spin-glass phase.

Year:  2013        PMID: 24093475     DOI: 10.1021/nl402229r

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  2 in total

1.  Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires.

Authors:  Keshab R Sapkota; Weimin Chen; F Scott Maloney; Uma Poudyal; Wenyong Wang
Journal:  Sci Rep       Date:  2016-10-14       Impact factor: 4.379

2.  Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1-x nanomesh.

Authors:  Tianxiao Nie; Jianshi Tang; Xufeng Kou; Yin Gen; Shengwei Lee; Xiaodan Zhu; Qinglin He; Li-Te Chang; Koichi Murata; Yabin Fan; Kang L Wang
Journal:  Nat Commun       Date:  2016-10-20       Impact factor: 14.919

  2 in total

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