Literature DB >> 24033065

Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As.

J Fujii1, B R Salles, M Sperl, S Ueda, M Kobata, K Kobayashi, Y Yamashita, P Torelli, M Utz, C S Fadley, A X Gray, J Braun, H Ebert, I Di Marco, O Eriksson, P Thunström, G H Fecher, H Stryhanyuk, E Ikenaga, J Minár, C H Back, G van der Laan, G Panaccione.   

Abstract

We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, for both low (1%) and high (13%) Mn doping values, the electronic character of the states near the top of the valence band. Magnetization and temperature-dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.

Year:  2013        PMID: 24033065     DOI: 10.1103/PhysRevLett.111.097201

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide.

Authors:  Slavomír Nemšák; Mathias Gehlmann; Cheng-Tai Kuo; Shih-Chieh Lin; Christoph Schlueter; Ewa Mlynczak; Tien-Lin Lee; Lukasz Plucinski; Hubert Ebert; Igor Di Marco; Ján Minár; Claus M Schneider; Charles S Fadley
Journal:  Nat Commun       Date:  2018-08-17       Impact factor: 14.919

2.  Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor.

Authors:  Iriya Muneta; Shinobu Ohya; Hiroshi Terada; Masaaki Tanaka
Journal:  Nat Commun       Date:  2016-06-28       Impact factor: 14.919

  2 in total

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