| Literature DB >> 24033041 |
D A MacLellan1, D C Carroll, R J Gray, N Booth, M Burza, M P Desjarlais, F Du, B Gonzalez-Izquierdo, D Neely, H W Powell, A P L Robinson, D R Rusby, G G Scott, X H Yuan, C-G Wahlström, P McKenna.
Abstract
Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.Entities:
Year: 2013 PMID: 24033041 DOI: 10.1103/PhysRevLett.111.095001
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161