| Literature DB >> 23999318 |
Zhenhua Zhang1, Junjun Zhang, Gordon Kwong, Ji Li, Zhiqiang Fan, Xiaoqing Deng, Guiping Tang.
Abstract
All-<span class="Chemical">carbon <class="Chemical">span class="Chemical">sp-sp(2) hybrid structures comprised of a zigzag-edged trigonal graphene (ZTG)and carbon chains are proposed and constructed as nanojunctions. It has been found that such simple hybrid structures possess very intriguing propertiesapp:addword:intriguing. The high-performance rectifying behaviors similar to macroscopic p-n junction diodes, such as a nearly linear positive-bias I-V curve (metallic behavior), a very small leakage current under negative bias (insulating behavior), a rather low threshold voltage, and a large bias region contributed to a rectification, can be predicted. And also, a transistor can be built by such a hybrid structure, which can show an extremely high current amplification. This is because a sp-hybrid carbon chain has a special electronic structure which can limit the electronic resonant tunneling of the ZTG to a unique and favorable situation. These results suggest that these hybrid structures might promise importantly potential applications for developing nano-scale integrated circuits.Entities:
Year: 2013 PMID: 23999318 PMCID: PMC3759849 DOI: 10.1038/srep02575
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Geometrical structure.
(a) The general hybrid structure of Cn/N-ZTG/Cn. (b) Nanojunctions comprise of Cn/3-ZTG/Cn (n = 4,5,6,7) contacted with Au electrodes.
Figure 2The bond-length properties of the chain.
All dotted lines and solid lines indicate the bond length of a chain for a pure hybrid structure and nanojunction, respectively. S-C is the bond length between S atom and C atom at one end of a carbon chain, and C-T denotes the bond length of the C atom at another end of a carbon chain connecting the ZTG.
The spatial distribution of molecular states for all models at zero bias
| Model | HOMO − 2 | HOMO − 1 | HOMO | LUMO | LUMO + 1 |
|---|---|---|---|---|---|
| M1 | |||||
| M2 | |||||
| M3 | |||||
| M4 |
Figure 3Transmission spectra of all models in the bias region from −0.7 V to 0.7 V.
The middle region of both red dotted lines denoted the bias window (BW).
Figure 4The I-V characteristics.
(a) and (b) The I-V characteristics for all nanojunctions we construct. (c) The I-V characteristics for a nanojunction constructed by sandwiching a single 3-ZTG (without carbon chains on its two sides) between two Au electrodes. (d) The spin-polarized I-V characteristics. NM and FM indicate the non-magnetic state and the ferromagnetic state (α-spin plus β-spin), respectively.
Figure 5Evolution of the molecular orbital (MO) levels with applied bias for all nanojunctions.
The MO denoted by lines with open circle symbols features a relative higher delocalization and makes a large contribution to the electronic tunneling.
Figure 6The current amplification circuit.
(a) Structure of the transistor composed of an integration of two M1. (c) The circuit diagram and current direction of the transistor.
Figure 7The β-α relation.
When α = 0 or 2.0, β = 1.0 (no amplification effect). But the β is enhanced dramatically when the α value approaches 1.0, corresponding to a considerable current amplification.