| Literature DB >> 23978006 |
Mingyang Li1, Wei Han, Xin Jiang, Jaewoo Jeong, Mahesh G Samant, Stuart S P Parkin.
Abstract
Ionic liquid gating of three terminal field effect transistor devices with channels formed from SrTiO3(001) single crystals induces a metallic state in the channel. We show that the metallization is strongly affected by the presence of oxygen gas introduced external to the device whereas argon and nitrogen have no effect. The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced carrier annihilation.Entities:
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Year: 2013 PMID： 23978006 DOI： 10.1021/nl402088f
Source DB: PubMed Journal: Nano Lett ISSN： 1530-6984 Impact factor: 11.189