Literature DB >> 23938910

Crossover from photodarkening to photobleaching in a-Ge(x)Se(100-x) thin films.

Rakesh Ranjan Kumar1, A R Barik, E M Vinod, Mukund Bapna, K S Sangunni, K V Adarsh.   

Abstract

In this Letter, we present the interesting results of photodarkening (PD), transition toward photostability, and a slow crossover from PD to photobleaching when composition of the chalcogenide glassy thin film changes from Ge-deficient to rich. A subsequent Raman analysis on these as-prepared and irradiated samples provide the direct evidence of photoinduced structural rearrangement, i.e., photocrystallization of Se and the removal of edge-sharing GeSe4 tetrahedra. Further, our experimental results clearly demonstrate that light-induced effects can be effectively controlled by choosing the right composition and provide valuable information on synthesizing photostable/sensitive glasses.

Year:  2013        PMID: 23938910     DOI: 10.1364/OL.38.001682

Source DB:  PubMed          Journal:  Opt Lett        ISSN: 0146-9592            Impact factor:   3.776


  3 in total

1.  Role of Ge:As ratio in controlling the light-induced response of a-Ge(x)As(35-x)Se65 thin films.

Authors:  Pritam Khan; H Jain; K V Adarsh
Journal:  Sci Rep       Date:  2014-02-07       Impact factor: 4.379

2.  Observation of photobleaching in Ge-deficient Ge16.8Se83.2 chalcogenide thin film with prolonged irradiation.

Authors:  Sen Zhang; Yimin Chen; Rongping Wang; Xiang Shen; Shixun Dai
Journal:  Sci Rep       Date:  2017-11-06       Impact factor: 4.379

3.  Nanosecond light induced, thermally tunable transient dual absorption bands in a-Ge₅As₃₀Se₆₅ thin film.

Authors:  Pritam Khan; Tarun Saxena; H Jain; K V Adarsh
Journal:  Sci Rep       Date:  2014-10-10       Impact factor: 4.379

  3 in total

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