Literature DB >> 23938536

High Q SiC microresonators.

Jaime Cardenas1, Mian Zhang, Christopher T Phare, Shreyas Y Shah, Carl B Poitras, Biswajeet Guha, Michal Lipson.   

Abstract

We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 μm radius suspended microring resonator with Q=14,100 fabricated on commercially available SiC-on-silicon substrates.

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Year:  2013        PMID: 23938536     DOI: 10.1364/OE.21.016882

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  4 in total

1.  Quantum spintronics: Single spins in silicon carbide.

Authors:  Andrea Morello
Journal:  Nat Mater       Date:  2014-12-01       Impact factor: 43.841

2.  Silicon carbide zipper photonic crystal optomechanical cavities.

Authors:  Xiyuan Lu; Jonathan Y Lee; Qiang Lin
Journal:  Appl Phys Lett       Date:  2020-06-03       Impact factor: 3.791

3.  Integrated silicon carbide electro-optic modulator.

Authors:  Keith Powell; Liwei Li; Amirhassan Shams-Ansari; Jianfu Wang; Debin Meng; Neil Sinclair; Jiangdong Deng; Marko Lončar; Xiaoke Yi
Journal:  Nat Commun       Date:  2022-04-05       Impact factor: 17.694

4.  High-frequency and high-quality silicon carbide optomechanical microresonators.

Authors:  Xiyuan Lu; Jonathan Y Lee; Qiang Lin
Journal:  Sci Rep       Date:  2015-11-20       Impact factor: 4.379

  4 in total

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