Literature DB >> 23922289

Tunable electroluminescence in planar graphene/SiO(2) memristors.

Congli He1, Jiafang Li, Xing Wu, Peng Chen, Jing Zhao, Kuibo Yin, Meng Cheng, Wei Yang, Guibai Xie, Duoming Wang, Donghua Liu, Rong Yang, Dongxia Shi, Zhiyuan Li, Litao Sun, Guangyu Zhang.   

Abstract

Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  Si nanocrystals; electroluminescence; graphene/SiO2 nanogap devices; memristor

Year:  2013        PMID： 23922289     DOI： 10.1002/adma.201302447

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  8 in total

Review 1.  Decade of 2D-materials-based RRAM devices: a review.

Authors:  Muhammad Muqeet Rehman; Hafiz Mohammad Mutee Ur Rehman; Jahan Zeb Gul; Woo Young Kim; Khasan S Karimov; Nisar Ahmed
Journal:  Sci Technol Adv Mater       Date:  2020-03-18       Impact factor: 8.090

2.  Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L.

Authors:  Lu Wang; Dianzhong Wen
Journal:  Micromachines (Basel)       Date:  2019-08-16       Impact factor: 2.891

3.  Atomic scale memristive photon source.

Authors:  Bojun Cheng; Till Zellweger; Konstantin Malchow; Xinzhi Zhang; Mila Lewerenz; Elias Passerini; Jan Aeschlimann; Ueli Koch; Mathieu Luisier; Alexandros Emboras; Alexandre Bouhelier; Juerg Leuthold
Journal:  Light Sci Appl       Date:  2022-03-29       Impact factor: 17.782

4.  Flexible Neural Network Realized by the Probabilistic SiOx Memristive Synaptic Array for Energy-Efficient Image Learning.

Authors:  Sanghyeon Choi; Jingon Jang; Min Seob Kim; Nam Dong Kim; Jeehyun Kwag; Gunuk Wang
Journal:  Adv Sci (Weinh)       Date:  2022-02-16       Impact factor: 16.806

5.  Statistical signature of electrobreakdown in graphene nanojunctions.

Authors:  Charalambos Evangeli; Sumit Tewari; Jonathan Marcell Kruip; Xinya Bian; Jacob L Swett; John Cully; James Thomas; G Andrew D Briggs; Jan A Mol
Journal:  Proc Natl Acad Sci U S A       Date:  2022-06-27       Impact factor: 12.779

6.  Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.

Authors:  Yao-Feng Chang; Burt Fowler; Ying-Chen Chen; Fei Zhou; Chih-Hung Pan; Ting-Chang Chang; Jack C Lee
Journal:  Sci Rep       Date:  2016-02-16       Impact factor: 4.379

7.  Integrated graphene oxide resistive element in tunable RF filters.

Authors:  Heba Abunahla; Rida Gadhafi; Baker Mohammad; Anas Alazzam; Mamady Kebe; Mihai Sanduleanu
Journal:  Sci Rep       Date:  2020-08-04       Impact factor: 4.379

8.  Electroluminescence of atoms in a graphene nanogap.

Authors:  Hyungsik Kim; Young Duck Kim; Tong Wu; Qingrui Cao; Irving P Herman; James Hone; Jing Guo; Kenneth L Shepard
Journal:  Sci Adv       Date:  2022-01-21       Impact factor: 14.136
  8 in total

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