| Literature DB >> 23919559 |
James R Riley1, Sonal Padalkar, Qiming Li, Ping Lu, Daniel D Koleske, Jonathan J Wierer, George T Wang, Lincoln J Lauhon.
Abstract
Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, and dopant clustering reveals material quality comparable to that of planar LED QWs. The position-dependent CL emission wavelength of the nonpolar side-facet QWs and semipolar top QWs is correlated with In composition.Mesh:
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Year: 2013 PMID: 23919559 DOI: 10.1021/nl4021045
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189