| Literature DB >> 23912639 |
Yong Liu1, Jinle Lan, Wei Xu, Yaochun Liu, Yan-Ling Pei, Bo Cheng, Da-Bo Liu, Yuan-Hua Lin, Li-Dong Zhao.
Abstract
Upon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe0.94Te0.06O.Year: 2013 PMID: 23912639 DOI: 10.1039/c3cc44578j
Source DB: PubMed Journal: Chem Commun (Camb) ISSN: 1359-7345 Impact factor: 6.222