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Literature DB >> 23868142

Local temperature redistribution and structural transition during joule-heating-driven conductance switching in VO2.

Suhas Kumar¹, Matthew D Pickett, John Paul Strachan, Gary Gibson, Yoshio Nishi, R Stanley Williams.

Abstract

Joule-heating induced conductance-switching is studied in VO2 , a Mott insulator. Complementary in situ techniques including optical characterization, blackbody microscopy, scanning transmission X-ray microscopy (STXM) and numerical simulations are used. Abrupt redistribution in local temperature is shown to occur upon conductance-switching along with a structural phase transition, at the same current.

Keywords: joule-heating; memristors; mott transition; peierls transition; vanadium dioxide

Year: 2013 PMID： 23868142 DOI： 10.1002/adma.201302046

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

12 in total

1. Operando characterization of conductive filaments during resistive switching in Mott VO₂.

Authors: Shaobo Cheng; Min-Han Lee; Xing Li; Lorenzo Fratino; Federico Tesler; Myung-Geun Han; Javier Del Valle; R C Dynes; Marcelo J Rozenberg; Ivan K Schuller; Yimei Zhu
Journal: Proc Natl Acad Sci U S A Date: 2021-03-02 Impact factor: 11.205

2. A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature.

Authors: Guanxiong Liu; Bishwajit Debnath; Timothy R Pope; Tina T Salguero; Roger K Lake; Alexander A Balandin
Journal: Nat Nanotechnol Date: 2016-07-04 Impact factor: 39.213

3. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams.

Authors: Min-Woo Kim; Wan-Gil Jung; Tae-Sung Bae; Sung-Jin Chang; Ja-Soon Jang; Woong-Ki Hong; Bong-Joong Kim
Journal: Sci Rep Date: 2015-06-04 Impact factor: 4.379

Local temperature redistribution and structural transition during joule-heating-driven conductance switching in VO2.

1. Operando characterization of conductive filaments during resistive switching in Mott VO₂.

2. A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature.

3. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams.

4. A memristor SPICE model accounting for synaptic activity dependence.

5. Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy.

6. Physical origins of current and temperature controlled negative differential resistances in NbO₂.

7. Separation of current density and electric field domains caused by nonlinear electronic instabilities.

8. Spontaneous current constriction in threshold switching devices.

9. Thermally induced crystallization in NbO₂ thin films.

10. Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics.