Literature DB >> 23846306

Morphological transition of Si surfaces from solid nanowires to porous nanobelts at room temperature.

Chia-Yun Chen1, Ching-Ping Wong.   

Abstract

Multiple etching pathways for the formation of porous Si nanostructures are visualized with the addition of ethylene glycol in metal-assisted chemical etching. The monotonic transition from solid to porous morphologies of Si nanostructures along with remarkable photoluminescence (PL) emission efficiency and distinct wetting phenomena can be observed.

Entities:  

Year:  2013        PMID: 23846306     DOI: 10.1039/c3cc43466d

Source DB:  PubMed          Journal:  Chem Commun (Camb)        ISSN: 1359-7345            Impact factor:   6.222


  3 in total

1.  Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates.

Authors:  Chia-Yun Chen; Ta-Cheng Wei; Cheng-Ting Lin; Jheng-Yi Li
Journal:  Sci Rep       Date:  2017-06-09       Impact factor: 4.379

2.  High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field.

Authors:  Pin-Ju Chien; Ta-Cheng Wei; Chia-Yun Chen
Journal:  Nanoscale Res Lett       Date:  2020-01-30       Impact factor: 4.703

Review 3.  One-Dimensional (1D) Nanostructured Materials for Energy Applications.

Authors:  Abniel Machín; Kenneth Fontánez; Juan C Arango; Dayna Ortiz; Jimmy De León; Sergio Pinilla; Valeria Nicolosi; Florian I Petrescu; Carmen Morant; Francisco Márquez
Journal:  Materials (Basel)       Date:  2021-05-17       Impact factor: 3.623

  3 in total

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