Literature DB >> 23836363

High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.

Gunuk Wang1, Adam C Lauchner, Jian Lin, Douglas Natelson, Krishna V Palem, James M Tour.   

Abstract

An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  non-volatile memory; one diode-one resistor; silicon oxides

Year:  2013        PMID： 23836363     DOI： 10.1002/adma.201302047

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  6 in total

1.  Thermal crosstalk in 3-dimensional RRAM crossbar array.

Authors:  Pengxiao Sun; Nianduan Lu; Ling Li; Yingtao Li; Hong Wang; Hangbing Lv; Qi Liu; Shibing Long; Su Liu; Ming Liu
Journal:  Sci Rep       Date:  2015-08-27       Impact factor: 4.379

2.  Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors.

Authors:  Can Li; Lili Han; Hao Jiang; Moon-Hyung Jang; Peng Lin; Qing Wu; Mark Barnell; J Joshua Yang; Huolin L Xin; Qiangfei Xia
Journal:  Nat Commun       Date:  2017-06-05       Impact factor: 14.919

3.  Bioinspired bio-voltage memristors.

Authors:  Tianda Fu; Xiaomeng Liu; Hongyan Gao; Joy E Ward; Xiaorong Liu; Bing Yin; Zhongrui Wang; Ye Zhuo; David J F Walker; J Joshua Yang; Jianhan Chen; Derek R Lovley; Jun Yao
Journal:  Nat Commun       Date:  2020-04-20       Impact factor: 14.919

4.  Flexible Neural Network Realized by the Probabilistic SiOx Memristive Synaptic Array for Energy-Efficient Image Learning.

Authors:  Sanghyeon Choi; Jingon Jang; Min Seob Kim; Nam Dong Kim; Jeehyun Kwag; Gunuk Wang
Journal:  Adv Sci (Weinh)       Date:  2022-02-16       Impact factor: 16.806

5.  Electrically-generated memristor based on inkjet printed silver nanoparticles.

Authors:  Kyung Jean Yoon; Jin-Woo Han; Dong-Il Moon; Myeong Lok Seol; M Meyyappan; Han Joon Kim; Cheol Seong Hwang
Journal:  Nanoscale Adv       Date:  2019-06-17

6.  Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.

Authors:  Yao-Feng Chang; Burt Fowler; Ying-Chen Chen; Fei Zhou; Chih-Hung Pan; Ting-Chang Chang; Jack C Lee
Journal:  Sci Rep       Date:  2016-02-16       Impact factor: 4.379
  6 in total

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