Literature DB >> 23795701

Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor.

Y J Zhang1, J T Ye, Y Yomogida, T Takenobu, Y Iwasa.   

Abstract

Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

Entities:  

Year:  2013        PMID： 23795701     DOI： 10.1021/nl400902v

Source DB:  PubMed          Journal:  Nano Lett        ISSN： 1530-6984            Impact factor:   11.189


  20 in total

1.  Optoelectronic devices: monolayer diodes light up.

Authors:  Rudolf Bratschitsch
Journal:  Nat Nanotechnol       Date:  2014-04       Impact factor: 39.213

2.  Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide.

Authors:  Britton W H Baugher; Hugh O H Churchill; Yafang Yang; Pablo Jarillo-Herrero
Journal:  Nat Nanotechnol       Date:  2014-03-09       Impact factor: 39.213

Review 3.  Solar-energy conversion and light emission in an atomic monolayer p-n diode.

Authors:  Andreas Pospischil; Marco M Furchi; Thomas Mueller
Journal:  Nat Nanotechnol       Date:  2014-03-09       Impact factor: 39.213

4.  Improved contacts to p-type MoS2 transistors by charge-transfer doping and contact engineering.

Authors:  Siyuan Zhang; Son T Le; Curt A Richter; Christina A Hacker
Journal:  Appl Phys Lett       Date:  2019       Impact factor: 3.791

5.  Chemical Visualization of a GaN p-n junction by XPS.

Authors:  Deniz Caliskan; Hikmet Sezen; Ekmel Ozbay; Sefik Suzer
Journal:  Sci Rep       Date:  2015-09-11       Impact factor: 4.379

6.  Multiple MoS2 Transistors for Sensing Molecule Interaction Kinetics.

Authors:  Hongsuk Nam; Bo-Ram Oh; Pengyu Chen; Mikai Chen; Sungjin Wi; Wenjie Wan; Katsuo Kurabayashi; Xiaogan Liang
Journal:  Sci Rep       Date:  2015-05-27       Impact factor: 4.379

7.  Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors.

Authors:  Leiqiang Chu; Hennrik Schmidt; Jiang Pu; Shunfeng Wang; Barbaros Ozyilmaz; Taishi Takenobu; Goki Eda
Journal:  Sci Rep       Date:  2014-12-03       Impact factor: 4.379

8.  Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating.

Authors:  Wu Shi; Jianting Ye; Yijin Zhang; Ryuji Suzuki; Masaro Yoshida; Jun Miyazaki; Naoko Inoue; Yu Saito; Yoshihiro Iwasa
Journal:  Sci Rep       Date:  2015-08-03       Impact factor: 4.379

9.  High-mobility ambipolar ZnO-graphene hybrid thin film transistors.

Authors:  Wooseok Song; Soon Yeol Kwon; Sung Myung; Min Wook Jung; Seong Jun Kim; Bok Ki Min; Min-A Kang; Sung Ho Kim; Jongsun Lim; Ki-Seok An
Journal:  Sci Rep       Date:  2014-02-11       Impact factor: 4.379

10.  Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures.

Authors:  Xiaohui Hu; Liangzhi Kou; Litao Sun
Journal:  Sci Rep       Date:  2016-08-16       Impact factor: 4.379
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