Literature DB >> 23784849

Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors.

Ning Han1, Fengyun Wang, Jared J Hou, Sen Po Yip, Hao Lin, Fei Xiu, Ming Fang, Zaixing Yang, Xiaoling Shi, Guofa Dong, Tak Fu Hung, Johnny C Ho.   

Abstract

A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters.
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  III-V nanowire field-effect transistors; contact printing; inverters; metal decoration; n-channel metal-oxide-semiconductor (NMOS); threshold voltage modulation

Year:  2013        PMID： 23784849     DOI： 10.1002/adma.201301362

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  10 in total

1.  Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition.

Authors:  Ning Han; Fengyun Wang; Zaixing Yang; SenPo Yip; Guofa Dong; Hao Lin; Ming Fang; TakFu Hung; Johnny C Ho
Journal:  Nanoscale Res Lett       Date:  2014-07-10       Impact factor: 4.703

2.  Significantly enhanced thermal conductivity of indium arsenide nanowires via sulfur passivation.

Authors:  Yucheng Xiong; Hao Tang; Xiaomeng Wang; Yang Zhao; Qiang Fu; Juekuan Yang; Dongyan Xu
Journal:  Sci Rep       Date:  2017-10-16       Impact factor: 4.379

3.  Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition.

Authors:  Lei Shang; Longfei Song; Yiqian Wang; Rongsheng Cai; Lei Liu; Fengyun Wang
Journal:  Nanoscale Res Lett       Date:  2018-08-31       Impact factor: 4.703

4.  Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires.

Authors:  Dapan Li; Changyong Lan; Arumugam Manikandan; SenPo Yip; Ziyao Zhou; Xiaoguang Liang; Lei Shu; Yu-Lun Chueh; Ning Han; Johnny C Ho
Journal:  Nat Commun       Date:  2019-04-10       Impact factor: 14.919

5.  Formation mechanisms for the dominant kinks with different angles in InP nanowires.

Authors:  Minghuan Zhang; Fengyun Wang; Chao Wang; Yiqian Wang; SenPo Yip; Johnny C Ho
Journal:  Nanoscale Res Lett       Date:  2014-05-05       Impact factor: 4.703

6.  Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method.

Authors:  Ying Wang; Zaixing Yang; Xiaofeng Wu; Ning Han; Hanyu Liu; Shuobo Wang; Jun Li; WaiMan Tse; SenPo Yip; Yunfa Chen; Johnny C Ho
Journal:  Nanoscale Res Lett       Date:  2016-04-12       Impact factor: 4.703

7.  High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics.

Authors:  Li-Fan Shen; SenPo Yip; Zai-xing Yang; Ming Fang; TakFu Hung; Edwin Y B Pun; Johnny C Ho
Journal:  Sci Rep       Date:  2015-11-26       Impact factor: 4.379

8.  Diameter Dependence of Planar Defects in InP Nanowires.

Authors:  Fengyun Wang; Chao Wang; Yiqian Wang; Minghuan Zhang; Zhenlian Han; SenPo Yip; Lifan Shen; Ning Han; Edwin Y B Pun; Johnny C Ho
Journal:  Sci Rep       Date:  2016-09-12       Impact factor: 4.379

9.  Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires.

Authors:  Zai-Xing Yang; Yanxue Yin; Jiamin Sun; Luozhen Bian; Ning Han; Ziyao Zhou; Lei Shu; Fengyun Wang; Yunfa Chen; Aimin Song; Johnny C Ho
Journal:  Sci Rep       Date:  2018-05-02       Impact factor: 4.379

10.  Artificial visual systems enabled by quasi-two-dimensional electron gases in oxide superlattice nanowires.

Authors:  You Meng; Fangzhou Li; Changyong Lan; Xiuming Bu; Xiaolin Kang; Renjie Wei; SenPo Yip; Dapan Li; Fei Wang; Tsunaki Takahashi; Takuro Hosomi; Kazuki Nagashima; Takeshi Yanagida; Johnny C Ho
Journal:  Sci Adv       Date:  2020-11-11       Impact factor: 14.136
  10 in total

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