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Literature DB >> 23776056

Ferroelectricity driven by twisting of silicate tetrahedral chains.

Hiroki Taniguchi¹, Akihide Kuwabara, Jungeun Kim, Younghun Kim, Hiroki Moriwake, Sungwng Kim, Takuya Hoshiyama, Tsukasa Koyama, Shigeo Mori, Masaki Takata, Hideo Hosono, Yoshiyuki Inaguma, Mitsuru Itoh.

Abstract

Entities: Chemical

Keywords: ferroelectric phase transition; ferroelectricity; functional oxides; oxygen tetrahedra; silicates

Year: 2013 PMID： 23776056 DOI： 10.1002/anie.201302188

Source DB: PubMed Journal: Angew Chem Int Ed Engl ISSN： 1433-7851 Impact factor: 15.336

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Cited

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3 in total

1. Role of acentric displacements on the crystal structure and second-harmonic generating properties of RbPbCO3F and CsPbCO3F.

Authors: T Thao Tran; P Shiv Halasyamani; James M Rondinelli
Journal: Inorg Chem Date: 2014-05-27 Impact factor: 5.165

2. Preferential growth of (001)-oriented Bi₂SiO₅ thin films deposited on (101)-oriented rutile substrates and their ferroelectric and dielectric properties.

Authors: Masanori Kodera; Keisuke Ishihama; Takao Shimizu; Hiroshi Funakubo
Journal: Sci Rep Date: 2022-09-08 Impact factor: 4.996

3. Hierarchical dielectric orders in layered ferroelectrics Bi2SiO5.

Authors: Younghun Kim; Jungeun Kim; Akihiko Fujiwara; Hiroki Taniguchi; Sungwng Kim; Hiroshi Tanaka; Kunihisa Sugimoto; Kenichi Kato; Mitsuru Itoh; Hideo Hosono; Masaki Takata
Journal: IUCrJ Date: 2014-04-30 Impact factor: 4.769

3 in total

Ferroelectricity driven by twisting of silicate tetrahedral chains.

1. Role of acentric displacements on the crystal structure and second-harmonic generating properties of RbPbCO3F and CsPbCO3F.

2. Preferential growth of (001)-oriented Bi2SiO5 thin films deposited on (101)-oriented rutile substrates and their ferroelectric and dielectric properties.

3. Hierarchical dielectric orders in layered ferroelectrics Bi2SiO5.

2. Preferential growth of (001)-oriented Bi₂SiO₅ thin films deposited on (101)-oriented rutile substrates and their ferroelectric and dielectric properties.