| Literature DB >> 23767746 |
Y Kim1, J M Poumirol, A Lombardo, N G Kalugin, T Georgiou, Y J Kim, K S Novoselov, A C Ferrari, J Kono, O Kashuba, V I Fal'ko, D Smirnov.
Abstract
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E(2g) phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.Entities:
Year: 2013 PMID： 23767746 DOI： 10.1103/PhysRevLett.110.227402
Source DB: PubMed Journal: Phys Rev Lett ISSN： 0031-9007 Impact factor: 9.161