| Literature DB >> 23758663 |
Yabo Gao1, Yanfeng Zhang, Pengcheng Chen, Yuanchang Li, Mengxi Liu, Teng Gao, Donglin Ma, Yubin Chen, Zhihai Cheng, Xiaohui Qiu, Wenhui Duan, Zhongfan Liu.
Abstract
The atomic layer of hybridized hexagonal boron nitride (h-BN) and graphene has attracted a great deal of attention after the pioneering work of P. M. Ajayan et al. on Cu foils because of their unusual electronic properties (Ci, L. J.; et al. Nat. Mater. 2010, 9, 430-435). However, many fundamental issues are still not clear, including the in-plane atomic continuity as well as the edge type at the boundary of hybridized h-BN and graphene domains. To clarify these issues, we have successfully grown a perfect single-layer h-BN-graphene (BNC) patchwork on a selected Rh(111) substrate, via a two-step patching growth approach. With the ideal sample, we convinced that at the in-plane linking interface, graphene and h-BN can be linked perfectly at an atomic scale. More importantly, we found that zigzag linking edges were preferably formed, as demonstrated by atomic-scale scanning tunneling microscopy images, which was also theoretically verified using density functional theory calculations. We believe the experimental and theoretical works are of particular importance to obtain a fundamental understanding of the BNC hybrid and to establish a deliberate structural control targeting high-performance electronic and spintronic devices.Entities:
Year: 2013 PMID: 23758663 DOI: 10.1021/nl4021123
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189