Literature DB >> 23746124

Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch.

Byung Joon Choi1, Antonio C Torrezan, Kate J Norris, Feng Miao, John Paul Strachan, Min-Xian Zhang, Douglas A A Ohlberg, Nobuhiko P Kobayashi, J Joshua Yang, R Stanley Williams.   

Abstract

Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 × 10(7) cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.

Entities:  

Year:  2013        PMID: 23746124     DOI: 10.1021/nl401283q

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  11 in total

1.  Addressable Direct-Write Nanoscale Filament Formation and Dissolution by Nanoparticle-Mediated Bipolar Electrochemistry.

Authors:  Garrison M Crouch; Donghoon Han; Susan K Fullerton-Shirey; David B Go; Paul W Bohn
Journal:  ACS Nano       Date:  2017-05-04       Impact factor: 15.881

2.  Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiN.

Authors:  Dong-Hyeok Lim; Ga-Yeon Kim; Jin-Ho Song; Kwang-Sik Jeong; Dae-Hong Ko; Mann-Ho Cho
Journal:  Sci Rep       Date:  2015-10-22       Impact factor: 4.379

3.  Tunnel conductivity switching in a single nanoparticle-based nano floating gate memory.

Authors:  Alessandro Gambardella; Mirko Prezioso; Massimiliano Cavallini
Journal:  Sci Rep       Date:  2014-02-26       Impact factor: 4.379

4.  Study of multi-level characteristics for 3D vertical resistive switching memory.

Authors:  Yue Bai; Huaqiang Wu; Riga Wu; Ye Zhang; Ning Deng; Zhiping Yu; He Qian
Journal:  Sci Rep       Date:  2014-07-22       Impact factor: 4.379

5.  Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

Authors:  Millaty Mustaqima; Pilsun Yoo; Wei Huang; Bo Wha Lee; Chunli Liu
Journal:  Nanoscale Res Lett       Date:  2015-04-08       Impact factor: 4.703

6.  Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials.

Authors:  Xiaoli Li; Juan Jia; Yanchun Li; Yuhao Bai; Jie Li; Yana Shi; Lanfang Wang; Xiaohong Xu
Journal:  Sci Rep       Date:  2016-09-02       Impact factor: 4.379

Review 7.  Competing memristors for brain-inspired computing.

Authors:  Seung Ju Kim; Sang Bum Kim; Ho Won Jang
Journal:  iScience       Date:  2020-12-03

8.  Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention.

Authors:  Yuting Zhang; Swapnadeep Poddar; He Huang; Leilei Gu; Qianpeng Zhang; Yu Zhou; Shuai Yan; Sifan Zhang; Zhitang Song; Baoling Huang; Guozhen Shen; Zhiyong Fan
Journal:  Sci Adv       Date:  2021-09-03       Impact factor: 14.136

9.  Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors.

Authors:  Wei Yi; Sergey E Savel'ev; Gilberto Medeiros-Ribeiro; Feng Miao; M-X Zhang; J Joshua Yang; Alexander M Bratkovsky; R Stanley Williams
Journal:  Nat Commun       Date:  2016-04-04       Impact factor: 14.919

10.  Understanding memristive switching via in situ characterization and device modeling.

Authors:  Wen Sun; Bin Gao; Miaofang Chi; Qiangfei Xia; J Joshua Yang; He Qian; Huaqiang Wu
Journal:  Nat Commun       Date:  2019-08-01       Impact factor: 14.919

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