| Literature DB >> 23745907 |
L Nuccio1, M Willis, L Schulz, S Fratini, F Messina, M D'Amico, F L Pratt, J S Lord, I McKenzie, M Loth, B Purushothaman, J Anthony, M Heeney, R M Wilson, I Hernández, M Cannas, K Sedlak, T Kreouzis, W P Gillin, C Bernhard, A J Drew.
Abstract
Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials.Year: 2013 PMID: 23745907 DOI: 10.1103/PhysRevLett.110.216602
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161