| Literature DB >> 23736409 |
Takeshi Baba1, Suguru Akiyama, Masahiko Imai, Naoki Hirayama, Hiroyuki Takahashi, Yoshiji Noguchi, Tsuyoshi Horikawa, Tatsuya Usuki.
Abstract
We achieved 50-Gb/s operation of a ring-resonator-based silicon modulator for the first time. The pin-diode phase shifter, which consists of a side-wall-grating waveguide, was loaded into the ring resonator. The forward-biased operation mode was applied, which exhibited a V(π)L as small as 0.28 V · cm at 25 GHz. The driving voltage and optical insertion loss at 50-Gb/s were 1.96 V(pp) and 5.2 dB, respectively.Mesh：
Substances：
Year: 2013 PMID： 23736409 DOI： 10.1364/OE.21.011869
Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894