| Literature DB >> 23736389 |
M Muneeb1, X Chen, P Verheyen, G Lepage, S Pathak, E Ryckeboer, A Malik, B Kuyken, M Nedeljkovic, J Van Campenhout, G Z Mashanovich, G Roelkens.
Abstract
The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm is reported. The devices are fabricated on 200 mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5 dB) and good crosstalk characteristics (15-20 dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6 dB/cm.Entities:
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Year: 2013 PMID: 23736389 DOI: 10.1364/OE.21.011659
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894