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Literature DB >> 23705848

Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate.

Chi-Hsin Huang¹, Jian-Shiou Huang, Chih-Chung Lai, Hsin-Wei Huang, Su-Jien Lin, Yu-Lun Chueh.

Abstract

A bias polarity-manipulated transformation from filamentary to homogeneous resistive switching was demonstrated on a Pt/ZnO thin film/Pt device. Two types of switching behaviors, exhibiting different resistive switching characteristics and memory performances were investigated in detail. The detailed transformation mechanisms are systematically proposed. By controlling different compliance currents and RESET-stop voltages, controllable multistate resistances in low resistance states and a high resistance states in the ZnO thin film metal-insulator-metal structure under the homogeneous resistive switching were demonstrated. We believe that findings would open up opportunities to explore the resistive switching mechanisms and performance memristor with multistate storage.

Entities: Chemical

Year: 2013 PMID： 23705848 DOI： 10.1021/am4007287

Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN： 1944-8244 Impact factor: 9.229

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Cited

11 in total

1. A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application.

Authors: Ivan Rodrigo Kaufmann; Onur Zerey; Thorsten Meyers; Julia Reker; Fábio Vidor; Ulrich Hilleringmann
Journal: Nanomaterials (Basel) Date: 2021-04-30 Impact factor: 5.076

2. Memristive and neuromorphic behavior in a Li(x)CoO2 nanobattery.

Authors: V H Mai; A Moradpour; P Auban Senzier; C Pasquier; K Wang; M J Rozenberg; J Giapintzakis; C N Mihailescu; C M Orfanidou; E Svoukis; A Breza; Ch B Lioutas; S Franger; A Revcolevschi; T Maroutian; P Lecoeur; P Aubert; G Agnus; R Salot; P A Albouy; R Weil; D Alamarguy; K March; F Jomard; P Chrétien; O Schneegans
Journal: Sci Rep Date: 2015-01-14 Impact factor: 4.379

Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate.

1. A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application.

2. Memristive and neuromorphic behavior in a Li(x)CoO2 nanobattery.

3. Multistate resistive switching in silver nanoparticle films.

4. Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching.

5. Self-Selecting Resistive Switching Scheme Using TiO₂ Nanorod Arrays.

6. Compliance-Free ZrO₂/ZrO_2 - x /ZrO₂ Resistive Memory with Controllable Interfacial Multistate Switching Behaviour.

7. Internal stress induced natural self-chemisorption of ZnO nanostructured films.

8. Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate.

9. Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects.

Review 10. Status and Prospects of ZnO-Based Resistive Switching Memory Devices.