Literature DB >> 23686986

Quasi-electric fields and band offsets: teaching electrons new tricks (Nobel lecture).

H Kroemer1.   

Abstract

The invention and development of fast opto- and microelectronic components based on layered semiconductor structures, termed semiconductor heterostructures, is described herein. Such fast transistors are used in radio link satellites and the base stations of mobile telephones, for examples. Laser diodes built with the same technology drive the flow of information along fiber-optic cables, and may be found also in CD players, bar-code readers, and laser pointers. The double-heterostructure principle is also increasingly used in incoherent light-emitting diodes, for example in traffic lights and other light sources requiring colored visible light.
© 2001 WILEY-VCH Verlag GmbH, Weinheim, Fed. Rep. of Germany.

Year:  2001        PMID: 23686986     DOI: 10.1002/1439-7641(20010917)2:8/9<490::AID-CPHC490>3.0.CO;2-1

Source DB:  PubMed          Journal:  Chemphyschem        ISSN: 1439-4235            Impact factor:   3.102


  20 in total

1.  Emergent phenomena at oxide interfaces.

Authors:  H Y Hwang; Y Iwasa; M Kawasaki; B Keimer; N Nagaosa; Y Tokura
Journal:  Nat Mater       Date:  2012-01-24       Impact factor: 43.841

2.  Epitaxy of semiconductor-superconductor nanowires.

Authors:  P Krogstrup; N L B Ziino; W Chang; S M Albrecht; M H Madsen; E Johnson; J Nygård; C M Marcus; T S Jespersen
Journal:  Nat Mater       Date:  2015-01-12       Impact factor: 43.841

3.  Activating the molecular spinterface.

Authors:  Mirko Cinchetti; V Alek Dediu; Luis E Hueso
Journal:  Nat Mater       Date:  2017-04-25       Impact factor: 43.841

4.  Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping.

Authors:  Y Z Chen; F Trier; T Wijnands; R J Green; N Gauquelin; R Egoavil; D V Christensen; G Koster; M Huijben; N Bovet; S Macke; F He; R Sutarto; N H Andersen; J A Sulpizio; M Honig; G E D K Prawiroatmodjo; T S Jespersen; S Linderoth; S Ilani; J Verbeeck; G Van Tendeloo; G Rijnders; G A Sawatzky; N Pryds
Journal:  Nat Mater       Date:  2015-06-01       Impact factor: 43.841

5.  Interface Engineering for Nanoelectronics.

Authors:  C A Hacker; R C Bruce; S J Pookpanratana
Journal:  ECS Trans       Date:  2017

6.  Interface control by chemical and dimensional matching in an oxide heterostructure.

Authors:  Marita O'Sullivan; Joke Hadermann; Matthew S Dyer; Stuart Turner; Jonathan Alaria; Troy D Manning; Artem M Abakumov; John B Claridge; Matthew J Rosseinsky
Journal:  Nat Chem       Date:  2016-02-01       Impact factor: 24.427

7.  GaN/NbN epitaxial semiconductor/superconductor heterostructures.

Authors:  Rusen Yan; Guru Khalsa; Suresh Vishwanath; Yimo Han; John Wright; Sergei Rouvimov; D Scott Katzer; Neeraj Nepal; Brian P Downey; David A Muller; Huili G Xing; David J Meyer; Debdeep Jena
Journal:  Nature       Date:  2018-03-07       Impact factor: 49.962

Review 8.  Modelling Interfaces in Thin-Film Photovoltaic Devices.

Authors:  Michael D K Jones; James A Dawson; Stephen Campbell; Vincent Barrioz; Lucy D Whalley; Yongtao Qu
Journal:  Front Chem       Date:  2022-06-21       Impact factor: 5.545

9.  Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces.

Authors:  Takeaki Yajima; Yasuyuki Hikita; Makoto Minohara; Christopher Bell; Julia A Mundy; Lena F Kourkoutis; David A Muller; Hiroshi Kumigashira; Masaharu Oshima; Harold Y Hwang
Journal:  Nat Commun       Date:  2015-04-07       Impact factor: 14.919

10.  Universal electronic structure of polar oxide hetero-interfaces.

Authors:  Uwe Treske; Nadine Heming; Martin Knupfer; Bernd Büchner; Emiliano Di Gennaro; Amit Khare; Umberto Scotti Di Uccio; Fabio Miletto Granozio; Stefan Krause; Andreas Koitzsch
Journal:  Sci Rep       Date:  2015-09-28       Impact factor: 4.379

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