Literature DB >> 23679637

Optically controlled switching of the charge state of a single nitrogen-vacancy center in diamond at cryogenic temperatures.

P Siyushev1, H Pinto, M Vörös, A Gali, F Jelezko, J Wrachtrup.   

Abstract

In this Letter, the photoinduced switching of the single nitrogen-vacancy (NV) center between two different charge states, negative (NV(-)) and neutral (NV(0)), is studied under resonant excitation at liquid helium temperature. We show that resonant conversion of NV(0) to NV(-) significantly improves spectral stability of the NV(-) defect and allows high fidelity initialization of the spin qubit. Based on density functional theory calculations a novel mechanism involving an Auger ionization of NV(-) and charge transfer of an electron from the valence band to NV(0) is discussed. This study provides further insight into the charge dynamics of the NV center, which is relevant for quantum information processing based on an NV(-) defect in diamond.

Entities:  

Year:  2013        PMID: 23679637     DOI: 10.1103/PhysRevLett.110.167402

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  9 in total

1.  Photoelectric detection of electron spin resonance of nitrogen-vacancy centres in diamond.

Authors:  E Bourgeois; A Jarmola; P Siyushev; M Gulka; J Hruby; F Jelezko; D Budker; M Nesladek
Journal:  Nat Commun       Date:  2015-10-21       Impact factor: 14.919

2.  Stimulated emission from nitrogen-vacancy centres in diamond.

Authors:  Jan Jeske; Desmond W M Lau; Xavier Vidal; Liam P McGuinness; Philipp Reineck; Brett C Johnson; Marcus W Doherty; Jeffrey C McCallum; Shinobu Onoda; Fedor Jelezko; Takeshi Ohshima; Thomas Volz; Jared H Cole; Brant C Gibson; Andrew D Greentree
Journal:  Nat Commun       Date:  2017-01-27       Impact factor: 14.919

3.  Optical switching of defect charge states in 4H-SiC.

Authors:  D A Golter; C W Lai
Journal:  Sci Rep       Date:  2017-10-17       Impact factor: 4.379

4.  Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions.

Authors:  Matthias Niethammer; Matthias Widmann; Torsten Rendler; Naoya Morioka; Yu-Chen Chen; Rainer Stöhr; Jawad Ul Hassan; Shinobu Onoda; Takeshi Ohshima; Sang-Yun Lee; Amlan Mukherjee; Junichi Isoya; Nguyen Tien Son; Jörg Wrachtrup
Journal:  Nat Commun       Date:  2019-12-05       Impact factor: 14.919

5.  Monitoring Dark-State Dynamics of a Single Nitrogen-Vacancy Center in Nanodiamond by Auto-Correlation Spectroscopy: Photonionization and Recharging.

Authors:  Mengdi Zhang; Bai-Yan Li; Jing Liu
Journal:  Nanomaterials (Basel)       Date:  2021-04-10       Impact factor: 5.076

6.  Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation.

Authors:  Shojan P Pavunny; Andrew L Yeats; Hunter B Banks; Edward Bielejec; Rachael L Myers-Ward; Matthew T DeJarld; Allan S Bracker; D Kurt Gaskill; Samuel G Carter
Journal:  Sci Rep       Date:  2021-02-11       Impact factor: 4.996

7.  Photonic Quantum Networks formed from NV(-) centers.

Authors:  Kae Nemoto; Michael Trupke; Simon J Devitt; Burkhard Scharfenberger; Kathrin Buczak; Jörg Schmiedmayer; William J Munro
Journal:  Sci Rep       Date:  2016-05-24       Impact factor: 4.379

8.  Optical charge state control of spin defects in 4H-SiC.

Authors:  Gary Wolfowicz; Christopher P Anderson; Andrew L Yeats; Samuel J Whiteley; Jens Niklas; Oleg G Poluektov; F Joseph Heremans; David D Awschalom
Journal:  Nat Commun       Date:  2017-11-30       Impact factor: 14.919

9.  High-throughput nitrogen-vacancy center imaging for nanodiamond photophysical characterization and pH nanosensing.

Authors:  Maabur Sow; Horst Steuer; Sanmi Adekanye; Laia Ginés; Soumen Mandal; Barak Gilboa; Oliver A Williams; Jason M Smith; Achillefs N Kapanidis
Journal:  Nanoscale       Date:  2020-11-05       Impact factor: 7.790

  9 in total

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