Literature DB >> 23666895

The stoichiometry of electroless silicon etching in solutions of V2O5 and HF.

Kurt W Kolasinski1, William B Barclay.   

Abstract

Entities:  

Year:  2013        PMID： 23666895     DOI： 10.1002/anie.201300755

Source DB:  PubMed          Journal:  Angew Chem Int Ed Engl        ISSN： 1433-7851            Impact factor:   15.336


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  4 in total

1.  Formation of nanostructured silicon surfaces by stain etching.

Authors:  Maha Ayat; Samia Belhousse; Luca Boarino; Noureddine Gabouze; Rabah Boukherroub; Mohamed Kechouane
Journal:  Nanoscale Res Lett       Date:  2014-09-11       Impact factor: 4.703

2.  The Role of the Molecular Hydrogen Formation in the Process of Metal-Ion Reduction on Multicrystalline Silicon in a Hydrofluoric Acid Matrix.

Authors:  Stefan Schönekerl; Jörg Acker
Journal:  Nanomaterials (Basel)       Date:  2021-04-11       Impact factor: 5.076

3.  The mechanism of galvanic/metal-assisted etching of silicon.

Authors:  Kurt W Kolasinski
Journal:  Nanoscale Res Lett       Date:  2014-08-26       Impact factor: 4.703

Review 4.  Metal-Assisted Catalytic Etching (MACE) for Nanofabrication of Semiconductor Powders.

Authors:  Kurt W Kolasinski
Journal:  Micromachines (Basel)       Date:  2021-06-30       Impact factor: 2.891
  4 in total

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