Literature DB >> 23649872

Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping.

Scott A Chambers1, Meng Gu, Peter V Sushko, Hao Yang, Chongmin Wang, Nigel D Browning.   

Abstract

Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low.
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  first-principles modeling; metal/oxide interfaces; ohmic contacts; scanning transmission electron microscopy; x-ray and ultraviolet photoemission

Mesh:

Substances:

Year:  2013        PMID: 23649872     DOI: 10.1002/adma.201301030

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  2 in total

1.  Using persistent photoconductivity to write a low-resistance path in SrTiO3.

Authors:  Violet M Poole; Slade J Jokela; Matthew D McCluskey
Journal:  Sci Rep       Date:  2017-07-27       Impact factor: 4.379

2.  Nano-socketed nickel particles with enhanced coking resistance grown in situ by redox exsolution.

Authors:  Dragos Neagu; Tae-Sik Oh; David N Miller; Hervé Ménard; Syed M Bukhari; Stephen R Gamble; Raymond J Gorte; John M Vohs; John T S Irvine
Journal:  Nat Commun       Date:  2015-09-11       Impact factor: 14.919

  2 in total

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