X-ray photoelectron spectroscopy study of SnO2 and SnO2+x thin films.

SnO2 thin films were fabricated using low-pressure thermal chemical vapor deposition. The results of X-ray photoelectron spectroscopy revealed that the SiO2 layer with an O1S-binding energy of 531.2 eV was formed before the SnO2 layer with an O1S-binding energy of 530.5 eV was formed. In the beginning, the SnO2 thin film showed Sn3d5-binding energy peaks of 485 eV and 486.5 eV. Subsequently, it grew in the direction of 486.5 eV. The Sn3d5-binding strength of the SnO2+x thin film that was annealed in oxygen atmosphere was weaker than that of the SnO2 thin film. Additionally, the Sn3d5-binding strength decreased linearly as the depth of the thin film increased. The surface O1S-binding strength of the SnO2+x thin film annealed in oxygen atmosphere was stronger than that of the SnO2 thin film; however, this strength became weaker than that that of the SnO2 thin film when the depth of the thin film was 2500A or higher.