Literature DB >> 23598286

Synthesis and properties of antimonide nanowires.

B Mattias Borg1, Lars-Erik Wernersson.   

Abstract

Antimonide semiconductors are suitable for low-power electronics and long-wavelength optoelectronic applications. In recent years research on antimonide nanowires has become a rapidly growing field, and nano-materials have promising applications in fundamental physics research, for tunnel field-effect transistors, and long-wavelength detectors. In this review, we give an overview of the field of antimonide nanowires, beginning with a description of the synthesis of these nano-materials. Here we summarize numerous reports on antimonide nanowire growth, with the aim to give an overall picture of the distinctive properties of antimonide nanowire synthesis. Secondly, we review the data on the physical properties and emerging applications for antimonide nanowires, focusing on applications in electronics and optics.

Year:  2013        PMID: 23598286     DOI: 10.1088/0957-4484/24/20/202001

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  6 in total

1.  Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures.

Authors:  Suixing Shi; Zhi Zhang; Zhenyu Lu; Haibo Shu; Pingping Chen; Ning Li; Jin Zou; Wei Lu
Journal:  Nanoscale Res Lett       Date:  2015-03-01       Impact factor: 4.703

2.  Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition.

Authors:  Xianghai Ji; Xiaoguang Yang; Tao Yang
Journal:  Nanoscale Res Lett       Date:  2017-06-26       Impact factor: 4.703

3.  Self-Catalyzed InSb/InAs Quantum Dot Nanowires.

Authors:  Omer Arif; Valentina Zannier; Francesca Rossi; Daniele Ercolani; Fabio Beltram; Lucia Sorba
Journal:  Nanomaterials (Basel)       Date:  2021-01-13       Impact factor: 5.076

4.  High-Mobility Free-Standing InSb Nanoflags Grown on InP Nanowire Stems for Quantum Devices.

Authors:  Isha Verma; Sedighe Salimian; Valentina Zannier; Stefan Heun; Francesca Rossi; Daniele Ercolani; Fabio Beltram; Lucia Sorba
Journal:  ACS Appl Nano Mater       Date:  2021-05-26

Review 5.  Indium Antimonide Nanowires: Synthesis and Properties.

Authors:  Muhammad Shafa; Sadaf Akbar; Lei Gao; Muhammad Fakhar-E-Alam; Zhiming M Wang
Journal:  Nanoscale Res Lett       Date:  2016-03-24       Impact factor: 4.703

6.  Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process.

Authors:  Kan Li; Wei Pan; Jingyun Wang; Huayong Pan; Shaoyun Huang; Yingjie Xing; H Q Xu
Journal:  Nanoscale Res Lett       Date:  2016-04-26       Impact factor: 4.703

  6 in total

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