Literature DB >> 23580404

Low driving voltage and high mobility ambipolar field-effect transistors with PbS colloidal nanocrystals.

Satria Zulkarnaen Bisri1, Claudia Piliego, Maksym Yarema, Wolfgang Heiss, Maria Antonietta Loi.   

Abstract

PbS colloidal nanocrystals (NCs) are promising materials for optoelectronic devices, due to their size-tunable properties. However, there is still minimal understanding of their charge transport mechanism. Through a combination of ligand selections, ambipolar transistor structure optimization, and electrochemical gating usage, high carrier mobility is achieved. The outstanding device characteristics open possibility to investigate the intrinsic transport properties of PbS NCs.
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  ambipolar transistor; colloidal nanocrystals; electrolyte gating; layer-by-layer assembly; metal chalcogenides

Year:  2013        PMID： 23580404     DOI： 10.1002/adma.201205041

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  9 in total

1.  Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating.

Authors:  Feng Qin; Toshiya Ideue; Wu Shi; Yijin Zhang; Ryuji Suzuki; Masaro Yoshida; Yu Saito; Yoshihiro Iwasa
Journal:  J Vis Exp       Date:  2018-04-12       Impact factor: 1.355

2.  Light-emitting quantum dot transistors: emission at high charge carrier densities.

Authors:  Julia Schornbaum; Yuriy Zakharko; Martin Held; Stefan Thiemann; Florentina Gannott; Jana Zaumseil
Journal:  Nano Lett       Date:  2015-02-05       Impact factor: 11.189

3.  Reduced Carrier Recombination in PbS - CuInS2 Quantum Dot Solar Cells.

Authors:  Zhenhua Sun; Gary Sitbon; Thomas Pons; Artem A Bakulin; Zhuoying Chen
Journal:  Sci Rep       Date:  2015-05-29       Impact factor: 4.379

4.  Counterion-Mediated Ligand Exchange for PbS Colloidal Quantum Dot Superlattices.

Authors:  Daniel M Balazs; Dmitry N Dirin; Hong-Hua Fang; Loredana Protesescu; Gert H ten Brink; Bart J Kooi; Maksym V Kovalenko; Maria Antonietta Loi
Journal:  ACS Nano       Date:  2015-11-04       Impact factor: 15.881

5.  Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics.

Authors:  Mohamad I Nugraha; Roger Häusermann; Shun Watanabe; Hiroyuki Matsui; Mykhailo Sytnyk; Wolfgang Heiss; Jun Takeya; Maria A Loi
Journal:  ACS Appl Mater Interfaces       Date:  2017-01-27       Impact factor: 9.229

6.  Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal.

Authors:  Daniel M Balazs; Nisrina Rizkia; Hong-Hua Fang; Dmitry N Dirin; Jamo Momand; Bart J Kooi; Maksym V Kovalenko; Maria Antonietta Loi
Journal:  ACS Appl Mater Interfaces       Date:  2018-02-02       Impact factor: 9.229

7.  FeIn2S4 Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field-Effect Transistors.

Authors:  Hyunjung Kim; Anand P Tiwari; Eunhee Hwang; Yunhee Cho; Heemin Hwang; Sora Bak; Yeseul Hong; Hyoyoung Lee
Journal:  Adv Sci (Weinh)       Date:  2018-03-27       Impact factor: 16.806

8.  Stoichiometric control of the density of states in PbS colloidal quantum dot solids.

Authors:  Daniel M Balazs; Klaas I Bijlsma; Hong-Hua Fang; Dmitry N Dirin; Max Döbeli; Maksym V Kovalenko; Maria A Loi
Journal:  Sci Adv       Date:  2017-09-29       Impact factor: 14.136

9.  Engineering the Band Alignment in QD Heterojunction Films via Ligand Exchange.

Authors:  Gianluca Grimaldi; Mark J van den Brom; Indy du Fossé; Ryan W Crisp; Nicholas Kirkwood; Solrun Gudjonsdottir; Jaco J Geuchies; Sachin Kinge; Laurens D A Siebbeles; Arjan J Houtepen
Journal:  J Phys Chem C Nanomater Interfaces       Date:  2019-11-19       Impact factor: 4.126
  9 in total

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