| Literature DB >> 23576235 |
Min Wang1, Sung Kyu Jang, Won-Jun Jang, Minwoo Kim, Seong-Yong Park, Sang-Woo Kim, Se-Jong Kahng, Jae-Young Choi, Rodney S Ruoff, Young Jae Song, Sungjoo Lee.
Abstract
Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication.Entities:
Mesh:
Substances:
Year: 2013 PMID: 23576235 DOI: 10.1002/adma.201204904
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849