Literature DB >> 23575679

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire.

Saniya Deshpande1, Junseok Heo, Ayan Das, Pallab Bhattacharya.   

Abstract

In a classical light source, such as a laser, the photon number follows a Poissonian distribution. For quantum information processing and metrology applications, a non-classical emitter of single photons is required. A single quantum dot is an ideal source of single photons and such single-photon sources in the visible spectral range have been demonstrated with III-nitride and II-VI-based single quantum dots. It has been suggested that short-wavelength blue single-photon emitters would be useful for free-space quantum cryptography, with the availability of high-speed single-photon detectors in this spectral region. Here we demonstrate blue single-photon emission with electrical injection from an In0.25Ga0.75N quantum dot in a single nanowire. The emitted single photons are linearly polarized along the c axis of the nanowire with a degree of linear polarization of ~70%.

Entities:  

Year:  2013        PMID: 23575679     DOI: 10.1038/ncomms2691

Source DB:  PubMed          Journal:  Nat Commun        ISSN: 2041-1723            Impact factor:   14.919


  16 in total

1.  Electrically driven single-photon source.

Authors:  Zhiliang Yuan; Beata E Kardynal; R Mark Stevenson; Andrew J Shields; Charlene J Lobo; Ken Cooper; Neil S Beattie; David A Ritchie; Michael Pepper
Journal:  Science       Date:  2001-12-13       Impact factor: 47.728

2.  Quantum correlation among photons from a single quantum dot at room temperature

Authors: 
Journal:  Nature       Date:  2000-08-31       Impact factor: 49.962

3.  Photon antibunching in the fluorescence of individual color centers in diamond.

Authors:  R Brouri; A Beveratos; J P Poizat; P Grangier
Journal:  Opt Lett       Date:  2000-09-01       Impact factor: 3.776

4.  Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.

Authors:  Raffaella Calarco; Ralph J Meijers; Ratan K Debnath; Toma Stoica; Eli Sutter; Hans Lüth
Journal:  Nano Lett       Date:  2007-06-29       Impact factor: 11.189

5.  Ultrafast room temperature single-photon source from nanowire-quantum dots.

Authors:  S Bounouar; M Elouneg-Jamroz; M den Hertog; C Morchutt; E Bellet-Amalric; R André; C Bougerol; Y Genuist; J-Ph Poizat; S Tatarenko; K Kheng
Journal:  Nano Lett       Date:  2012-05-09       Impact factor: 11.189

6.  Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy.

Authors:  O Landré; C Bougerol; H Renevier; B Daudin
Journal:  Nanotechnology       Date:  2009-09-16       Impact factor: 3.874

7.  Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics.

Authors:  Wei Guo; Meng Zhang; Pallab Bhattacharya; Junseok Heo
Journal:  Nano Lett       Date:  2011-03-02       Impact factor: 11.189

8.  A gallium nitride single-photon source operating at 200 K.

Authors:  Satoshi Kako; Charles Santori; Katsuyuki Hoshino; Stephan Götzinger; Yoshihisa Yamamoto; Yasuhiko Arakawa
Journal:  Nat Mater       Date:  2006-10-22       Impact factor: 43.841

9.  Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy.

Authors:  Wei Guo; Meng Zhang; Animesh Banerjee; Pallab Bhattacharya
Journal:  Nano Lett       Date:  2010-09-08       Impact factor: 11.189

10.  Complete composition tunability of InGaN nanowires using a combinatorial approach.

Authors:  Tevye Kuykendall; Philipp Ulrich; Shaul Aloni; Peidong Yang
Journal:  Nat Mater       Date:  2007-10-28       Impact factor: 43.841

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  16 in total

1.  Ultrafast single photon emitting quantum photonic structures based on a nano-obelisk.

Authors:  Je-Hyung Kim; Young-Ho Ko; Su-Hyun Gong; Suk-Min Ko; Yong-Hoon Cho
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

2.  Growth Mechanism and Luminescent Properties of Amorphous SiOx Structures via Phase Equilibrium in Binary System.

Authors:  Changhyun Jin; Seon Jae Hwang; Myeong Soo Cho; Sun-Woo Choi; Han Gil Na; Suyoung Park; Sungsik Park; Youngwook Noh; Hakyung Jeong; Dongjin Lee
Journal:  Sci Rep       Date:  2016-08-01       Impact factor: 4.379

3.  Non-synchronization of lattice and carrier temperatures in light-emitting diodes.

Authors:  Jihong Zhang; Tienmo Shih; Yijun Lu; Holger Merlitz; Richard Ru-Gin Chang; Zhong Chen
Journal:  Sci Rep       Date:  2016-01-20       Impact factor: 4.379

4.  Determination of critical diameters for intrinsic carrier diffusion-length of GaN nanorods with cryo-scanning near-field optical microscopy.

Authors:  Y T Chen; K F Karlsson; J Birch; P O Holtz
Journal:  Sci Rep       Date:  2016-02-15       Impact factor: 4.379

5.  Horizontally assembled green InGaN nanorod LEDs: scalable polarized surface emitting LEDs using electric-field assisted assembly.

Authors:  Hoo Keun Park; Seong Woong Yoon; Yun Jae Eo; Won Woo Chung; Gang Yeol Yoo; Ji Hye Oh; Keyong Nam Lee; Woong Kim; Young Rag Do
Journal:  Sci Rep       Date:  2016-06-21       Impact factor: 4.379

6.  Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization.

Authors:  Tao Tao; Ting Zhi; Bin Liu; Mingxue Li; Zhe Zhuang; Jiangping Dai; Yi Li; Fulong Jiang; Wenjun Luo; Zili Xie; Dunjun Chen; Peng Chen; Zhaosheng Li; Zhigang Zou; Rong Zhang; Youdou Zheng
Journal:  Sci Rep       Date:  2016-02-08       Impact factor: 4.379

7.  Scattering of nanowire surface plasmons coupled to quantum dots with azimuthal angle difference.

Authors:  Po-Chen Kuo; Guang-Yin Chen; Yueh-Nan Chen
Journal:  Sci Rep       Date:  2016-11-28       Impact factor: 4.379

8.  Temperature dependence of the single photon emission from interface-fluctuation GaN quantum dots.

Authors:  F Le Roux; K Gao; M Holmes; S Kako; M Arita; Y Arakawa
Journal:  Sci Rep       Date:  2017-11-23       Impact factor: 4.379

9.  Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures.

Authors:  Tong Wang; Tim J Puchtler; Saroj K Patra; Tongtong Zhu; John C Jarman; Rachel A Oliver; Stefan Schulz; Robert A Taylor
Journal:  Sci Rep       Date:  2017-09-21       Impact factor: 4.379

10.  Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications.

Authors:  Hyun Kum; Han-Kyu Seong; Wantae Lim; Daemyung Chun; Young-Il Kim; Youngsoo Park; Geonwook Yoo
Journal:  Sci Rep       Date:  2017-01-18       Impact factor: 4.379

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