Literature DB >> 23521232

Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl.

Siham Ouardi1, Gerhard H Fecher, Claudia Felser, Jürgen Kübler.   

Abstract

Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic semiconductor Mn(2)CoAl, an inverse Heusler compound with a Curie temperature of 720 K and a magnetic moment of 2 μ(B). Below 300 K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn(2) CoAl is not only suitable material for room temperature semiconductor spintronics, the robust spin polarization of the spin gapless semiconductors makes it very promising material for spintronics in general.

Entities:  

Year:  2013        PMID: 23521232     DOI: 10.1103/PhysRevLett.110.100401

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  21 in total

1.  Structural configuration and tetragonal phase stability in the equiatomic quaternary Heusler compound TiZnMnSi.

Authors:  Jiaying Ji; Qijia Gu; Rabah Khenata; Fayang Guo; Yanfeng Wang; Tie Yang; Xingwen Tan
Journal:  RSC Adv       Date:  2020-11-01       Impact factor: 4.036

2.  Effect of swap disorder on the physical properties of the quaternary Heusler alloy PdMnTiAl: a first-principles study.

Authors:  Guanhua Qin; Wei Wu; Shunbo Hu; Yongxue Tao; Xiaoyan Yan; Chao Jing; Xi Li; Hui Gu; Shixun Cao; Wei Ren
Journal:  IUCrJ       Date:  2017-06-21       Impact factor: 4.769

3.  Rare earth-based quaternary Heusler compounds MCoVZ (M = Lu, Y; Z = Si, Ge) with tunable band characteristics for potential spintronic applications.

Authors:  Xiaotian Wang; Zhenxiang Cheng; Guodong Liu; Xuefang Dai; Rabah Khenata; Liying Wang; Abdelmadjid Bouhemadou
Journal:  IUCrJ       Date:  2017-10-06       Impact factor: 4.769

4.  New quaternary half-metallic ferromagnets with large Curie temperatures.

Authors:  Ashis Kundu; Srikrishna Ghosh; Rudra Banerjee; Subhradip Ghosh; Biplab Sanyal
Journal:  Sci Rep       Date:  2017-05-11       Impact factor: 4.379

5.  Anti-site-induced diverse diluted magnetism in LiMgPdSb-type CoMnTiSi alloy.

Authors:  T T Lin; X F Dai; R K Guo; Z X Cheng; L Y Wang; X T Wang; G D Liu
Journal:  Sci Rep       Date:  2017-02-07       Impact factor: 4.379

6.  Theoretical prediction of strain tuneable quaternary spintronic Heusler compounds.

Authors:  Jan-Willem G Bos
Journal:  IUCrJ       Date:  2017-10-27       Impact factor: 4.769

7.  Electronic structure and its external electric field modulation of PbPdO2 ultrathin slabs with (002) and (211) preferred orientations.

Authors:  Yanmin Yang; Kehua Zhong; Guigui Xu; Jian-Min Zhang; Zhigao Huang
Journal:  Sci Rep       Date:  2017-07-31       Impact factor: 4.379

8.  Accelerated discovery of new magnets in the Heusler alloy family.

Authors:  Stefano Sanvito; Corey Oses; Junkai Xue; Anurag Tiwari; Mario Zic; Thomas Archer; Pelin Tozman; Munuswamy Venkatesan; Michael Coey; Stefano Curtarolo
Journal:  Sci Adv       Date:  2017-04-14       Impact factor: 14.136

9.  Nucleation and annihilation of skyrmions in Mn2CoAl observed through the topological Hall effect.

Authors:  B M Ludbrook; G Dubuis; A-H Puichaud; B J Ruck; S Granville
Journal:  Sci Rep       Date:  2017-10-19       Impact factor: 4.379

10.  Strain Engineered Band Gaps and Electronic Properties in PbPdO₂ and PbPd0.75Co0.25O₂ Slabs.

Authors:  Yanmin Yang; Kehua Zhong; Guigui Xu; Jian-Min Zhang; Zhigao Huang
Journal:  Materials (Basel)       Date:  2018-10-16       Impact factor: 3.623

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.