| Literature DB >> 23512721 |
Kihyon Hong1, Se Hyun Kim, Keun Hyung Lee, C Daniel Frisbie.
Abstract
Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm(-2) V(-1) s(-1) ), low operation voltage (<2 V), and good electrical/mechanical stabilities.Entities:
Keywords: electrolyte gated transistors (EGTs); flexible substrates; ion-gel gate insulators; printed ZnO transistors; thin-film transistors
Year: 2013 PMID： 23512721 DOI： 10.1002/adma.201300211
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849